Electric-field-enhanced neutralization of deep centers in GaAs.

The charge dynamics of hydrogenlike centers in semi-insulating GaAs have been studied by muon spin resonance in the presence of electric field and RF excitation. Electric-field-enhanced neutralization of deep electron and hole traps by track-induced hot carriers results in an increase of the excess electron's or hole's lifetimes. Similar processes may take place in semiconductor devices working at high voltages and/or under irradiation. As a consequence of the deep traps neutralization, the muonium (mu{+} + e{-}) center can capture a hole.

Formation of hydrogen impurity States in silicon and insulators at low implantation energies.

The formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons (mu+) between 1 and 30 keV the number of electron-hole pairs generated in the ionization track of the mu+ can be tuned between a few and several thousand. The results show the strong suppression of the formation of those Mu states that depend on the availability of excess electrons. This indicates that the role of H-impurity states in determining electric properties of semiconductors and insulators depends on the way in which atomic H is introduced into the material.

Muon-spin-rotation measurements of the penetration depth of the infinite-layer electron-doped Sr0.9La0.1CuO2 cuprate superconductor.

Muon-spin-rotation (muSR) measurements of the in-plane penetration depth lambda(ab) have been performed in the infinite-layer electron-doped Sr0.9La0.1CuO2 high-T(c) superconductor (HTS). Absence of the magnetic rare-earth ions in this compound allowed us to measure for the first time the absolute value of lambda(ab)(0) in electron-doped HTSs using muSR. We found lambda(ab)(0)=116(2) nm. The zero-temperature depolarization rate sigma(0) proportional, variant 1/lambda(2)(ab)(0)=4.6(1) micros(-1) is more than 4 times higher than expected from the Uemura line. Therefore, this electron-doped HTS does not follow the Uemura relation found for hole-doped HTSs.

Pressure effects on the transition temperature and the magnetic field penetration depth in the pyrochlore superconductor RbOs2O6.

Magnetization measurements under hydrostatic pressure up to 8 kbar in the pyrochlore superconductor RbOs2O6 (T(c) approximately or equal 6.3 K at p=0) were carried out. A positive pressure effect on T(c) with dT(c)/dp=0.090(3) K/kbar was observed, whereas no pressure effect on the magnetic penetration depth lambda was detected. The pressure independent ratio 2 Delta(0)/k(B)T(c)=3.72(2) (Delta(0) is the superconducting gap at zero temperature) was found to be close to the BCS value 3.52. Magnetization and muon-spin rotation measurements of lambda(T) indicate that RbOs2O6 is an adiabatic s-wave BCS-type superconductor. The value of lambda extrapolated to zero temperature and ambient pressure was estimated to be 230(30) nm.

Direct observation of the oxygen isotope effect on the in-plane magnetic field penetration depth in optimally doped YBa2Cu3O7-delta.

We report the first direct observation of the oxygen-isotope ((16)O/(18)O) effect on the in-plane penetration depth lambda(ab) in a nearly optimally doped YBa(2)Cu(3)O(7-delta) film using the novel low-energy muon-spin rotation technique. Spin-polarized low-energy muons are implanted in the film at a known depth z beneath the surface and process in the local magnetic field B(z). This feature allows us to measure directly the profile B(z) of the magnetic field inside the superconducting film in the Meissner state and to make a straightforward determination of lambda(ab). A substantial isotope shift Delta lambda(ab)/lambda(ab)=2.8(1.0)% at 4 K is observed, implying that the in-plane effective supercarrier mass m*(ab) is oxygen-isotope dependent with Delta m*(ab)/m*(ab)=5.5(2.0)%. These results are in good agreement with magnetization measurements on powder samples.

Influence of impurities on short range electron transport in GaAs.

The influence of Cr impurities on muonium atom formation in GaAs has been studied using muon spin relaxation techniques with alternating electric fields. The results suggest that electron transport to and capture by the muon is suppressed by capture/scattering on intervening Cr centers. The length scale involved is estimated to be about 3x10(-6) cm. This offers an opportunity to study electron transport to positive centers in semiconductors on a microscopic scale.