Electro-Optical Properties of Monolayer and Bilayer Pentagonal BN: First Principles Study.

Two-dimensional hexagonal boron nitride (hBN) is an insulator with polar covalent B-N bonds. Monolayer and bilayer pentagonal BN emerge as an optoelectronic material, which can be used in photo-based devices such as photodetectors and photocatalysis. Herein, we implement spin polarized electron density calculations to extract electronic/optical properties of mono- and bilayer pentagonal BN structures, labeled as B 2 N 4 , B 3 N 3 , and B 4 N 2 . Unlike the insulating hBN, the pentagonal BN exhibits metallic or semiconducting behavior, depending on the detailed pentagonal structures. The origin of the metallicity is attributed to the delocalized boron (B) 2p electrons, which has been verified by electron localized function and electronic band structure as well as density of states. Interestingly, all 3D networks of different bilayer pentagonal BN are dynamically stable unlike 2D structures, whose monolayer B 4 N 2 is unstable. These 3D materials retain their metallic and semiconductor nature. Our findings of the optical properties indicate that pentagonal BN has a visible absorption peak that is suitable for photovoltaic application. Metallic behavior of pentagonal BN has a particular potential for thin-film based devices and nanomaterial engineering.

A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2.

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within -10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.

Phase transition and mechanical properties of cesium bismuth silver halide double perovskites (Cs2AgBiX6, X = Cl, Br, I): a DFT approach.

Double perovskite-based silver and bismuth Cs2AgBiX6 (X = Cl, Br, I) have shown a bright future for the development of low-risk photovoltaic devices due to their high stability and non-toxicity of their elements, unlike Pb-based perovskites. Despite the great focus on the optoelectronic properties of Cs2AgBiX6 double perovskites, there are limited studies on the behavior of their structural properties. Herein, we carefully examined the cubic structure of Cs2AgBiX6 double perovskites, identifying a pseudo-cubic (ps-cubic) phase, which is similar to the initial cubic phase. The observed pseudo-cubic phase is more consistent with previous experimental results demonstrating higher elastic properties, which are useful for designing optoelectronic devices.

Hydrogenated Ψ-graphene as an ultraviolet optomechanical sensor.

PSI (ψ)-graphene is a dynamically and thermally stable two-dimensional (2D) allotrope of carbon composed of 5-6-7 carbon rings. Herein, we study the opto/mechanical behavior of two graphene allotropes, Ψ-graphene and its hydrogenated form, Ψ-graphane under uniaxial and biaxial strain using density functional theory (DFT) calculations. We calculated the elastic constants and second Piola-Kirchhoff (PK2) stresses, in which both nanostructures indicate a similar elasticity behavior to graphene. Also, the plasmonic behavior of these structures in response to various strains has been studied. As a result, plasmonic peaks varied up to about 2 eV under strain. Our findings reveal that these two structures have a large peak in the ultraviolet (UV) region and can be tuned by different applied strain. In addition, Ψ-graphene has smaller peaks in the IR and UV regions. Therefore, both Ψ-graphene and Ψ-graphane can be used as UV optomechanical sensors, whereas Ψ-graphene could be used as an infrared (IR) and visible sensor.