TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes.

We have prepared ferromagnetic nanostructures intended for the investigation of high-frequency magnetization dynamics in permalloy (Py) nanodisks using Lorentz transmission electron microscopy (LTEM) and electron holography. Py nanodisks were fabricated on thin silicon nitride (SiN) membranes using three different fabrication methods: lift-off, ion beam etching (IBE), and stencil lithography. They were further analyzed using different instruments, including scanning electron microscopy, LTEM, and electron holography. A bilayer of positive PMMA resist was utilized in the first fabrication method to form an undercut structure that guarantees a clean lift-off procedure. The second approach used dry etching with an Ar beam to etch a thin Py film, while an electron-beam-patterned negative resist mask kept the desired structure. In the third process, nanostencils (shadow masks) with submicrometer apertures were milled on SiN membranes using a focused ion beam. Furthermore, we have developed a new TEM sample preparation method, where we fabricated Py nanostructures on a bulk substrate with a SiN buffer layer and etched the substrate to create a thin SiN membrane under the Py nanostructure. Finally, we observed the vortex dynamics of the Py nanodisk under magnetic fields using LTEM and off-axis electron holography. A correlation between preparation methods and the properties of the Py nanostructures was made.

Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics.

Nanobridge Josephson junctions and nanometer-scale superconducting quantum interference devices (nanoSQUIDs) based on titanium nitride (TiN) thin films are described. The TiN films have a room temperature resistivity of ~15 µΩ·cm, a superconducting transition temperature Tc of up to 5.3 K and a coherence length ξ(4.2 K) of ~105 nm. They were deposited using pulsed DC magnetron sputtering from a stoichiometric TiN target onto Si (100) substrates that were heated to 800 °C. Electron beam lithography and highly selective reactive ion etching were used to fabricate nanoSQUIDs with 20-nm-wide nanobridge Josephson junctions of variable thickness. X-ray and high-resolution electron microscopy studies were performed. Non-hysteretic I(V) characteristics of the nanobridges and nanoSQUIDs, as well as peak-to-peak modulations of up to 17 µV in the V(B) characteristics of the nanoSQUIDs, were measured at 4.2 K. The technology offers prospects for superconducting electronics based on nanobridge Josephson junctions operating within the framework of the Ginzburg-Landau theory at 4.2 K.