Experimental setup for investigating silicon solid phase crystallization at high temperatures.

An experimental setup is presented to measure and interpret the solid phase crystallization of amorphous silicon thin films on glass at very high temperatures of about 800 °C. Molybdenum-SiO(2)-silicon film stacks were irradiated by a diode laser with a well-shaped top hat profile. From the relevant thermal and optical parameters of the system the temperature evolution can be calculated accurately. A time evolution of the laser power was applied which leads to a temperature constant in time in the center of the sample. Such a process will allow the observation and interpretation of solid phase crystallization in terms of nucleation and growth in further work.

A time-resolved numerical study of the vapor-liquid-solid growth kinetics describing the initial nucleation phase as well as pulsed deposition processes.

Today, the vapor-liquid-solid (VLS) growth mechanism is a common process for the metal catalyzed bottom-up growth of semiconductor nanowires (NWs). Nevertheless, most of the literature only is concerned with the steady-state NW growth which applies when the amount of material supplied is equal to the amount consumed by the NW growth at the same time. While this description is suitable for chemical vapor deposition (CVD) or electron beam evaporation (EBE) processes after the initial nucleation time, problems arise when pulsed growth processes like pulsed laser deposition (PLD) are used since in this case the steady state growth condition cannot be applied. Moreover, the initial phase of NW growth cannot be described with steady state growth conditions, either. In this work, we present a modeling approach for VLS NW growth based on numerical simulations, which is capable of describing the nucleation phase of the VLS growth process as well as a pulsed deposition process.

Temperature dependent optical properties of amorphous silicon for diode laser crystallization.

The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.

Temperature dependent optical properties of amorphous silicon for diode laser crystallization.

The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.

Heat- and electron-beam-induced transport of gold particles into silicon oxide and silicon studied by in situ high-resolution transmission electron microscopy.

In this study, we describe the transport of gold (Au) nanoparticles from the surface into crystalline silicon (Si) covered by silicon oxide (SiO(2)) as revealed by in situ high-resolution transmission electron microscopy. Complete crystalline Au nanoparticles sink through the SiO(2) layer into the Si substrate when high-dose electron irradiation is applied and temperature is raised above 150 degrees C. Above temperatures of 250 degrees C, the Au nanoparticles finally dissolve into fragments accompanied by crystallization of the amorphized Si substrate around these fragments. The transport process is explained by a wetting process followed by Stokes motion. Modelling this process yields boundaries for the interface energies involved.