Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.

The monolithic integration of InAs(1-x)Sb(x) semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs(1-x)Sb(x) nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs(1-x)Sb(x) nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs(1-x)Sb(x) nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs(1-x)Sb(x) nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.

New type of B-periodic magneto-oscillations in a two-dimensional electron system induced by microwave irradiation.

We observe a new type of magneto-oscillations in the photovoltage and the longitudinal resistance of a two-dimensional electron system. The oscillations are induced by microwave radiation and are periodic in magnetic field. The period is determined by the microwave frequency, the electron density, and the distance between potential probes. The phenomenon is accounted for by interference of coherently excited edge magnetoplasmons in the contact regions and offers perspectives for developing new tunable microwave and terahertz detection schemes and spectroscopic techniques.