A Time Mode Pulse Interleaver in a Silicon-on-Insulator Platform for Optical Analog-to-Digital Converters.

We propose and demonstrate a novel on-chip optical sampling pulse interleaver based on time mode interleaving. The designed pulse interleaver was fabricated on a 220 nm silicon-on-insulator (SOI) platform, utilizing only one S-shaped delay waveguide. Interleaving is achieved by the relative time delay between different optical modes in the waveguide, eliminating the need for any active tuning. The total length of the delay waveguide is 5620.5 µm, which is reduced by a factor of 46.3% compared with previously reported time-wavelength interleaver schemes. The experimental results indicate that the device can convert an optical pulse into a 40 GHz pulse sequence composed of four pulses with a root mean square (RMS) timing error of 0.9 ps, making it well suited for generating high-frequency sampling pulses for optical analog-to-digital converters.

Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption.

We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P+ ion-implanted, laser-annealed, and conventional high-temperature annealed wafers were investigated at room temperature. Three peaks were observed in the absorption spectra collected for various samples. The degree of electrical activation after laser annealing or high-temperature annealing was evaluated qualitatively from the absorption peak intensity at 2.67 eV. The circular transmission line method (CTLM) results were consistent with the optical absorption results. However, it was found that the effective carrier concentration after laser annealing was significantly lower than that after high-temperature annealing.

C-band four-channel CWDM (de-)multiplexers on a thin film lithium niobate-silicon rich nitride hybrid platform.

A four-channel coarse wavelength division multiplexing (CWDM) (de)multiplexer on a thin film lithium niobate-silicon rich nitride hybrid platform has been designed, fabricated, and experimentally measured. Enabled by cascaded multimode waveguide Bragg gratings, the (de)multiplexer has a box-like spectral response, wide 1-dB bandwidth (10 nm), low excess loss (<1.08dB), and low channel cross talk (<-18dB). The central wavelengths of the (de-)multiplexer are 1531/1551/1571/1591 nm, which align to the wavelength grids stipulated by the standard ITU-T G.694.2.

On-chip four-mode (de-)multiplexer on thin film lithium niobate-silicon rich nitride hybrid platform.

A four-mode (de-)multiplexer with transverse electric field light (TE0-TE3) is experimentally demonstrated on a thin film lithium niobate-silicon rich nitride hybrid platform. Enabled by cascaded asymmetrical directional couplers, a (de-)multiplexer with low insertion loss (0.38 dB to 1.6 dB) and low cross talk (-18.46dB to -20.43dB) is obtained at 1550 nm. All channels have cross talk <-16dB from 1480 nm to 1580 nm. The transmission of 4×50 Gbps on-off keying signals is experimentally achieved on the proposed (de-)multiplexer. Experimental results show that the proposed (de-)multiplexer is a promising approach to enhance the transmission capacity in thin film lithium niobate based photonics integrated circuits.

Efficient grating couplers on a thin film lithium niobate-silicon rich nitride hybrid platform.

A grating coupler on a thin film x-cut lithium niobate-silicon rich nitride hybrid platform is proposed and demonstrated. An inverse taper is applied to suppress higher-order mode excitation. A coupling efficiency of -5.82dB and 3 dB bandwidth of 57 nm are obtained near the wavelength of 1550 nm between the standard single-mode fiber (SMF-28) and sub-micrometer waveguides.

TE/TM-pass polarizers based on lateral leakage in a thin film lithium niobate-silicon nitride hybrid platform.

TE/TM-pass polarizers based on the lithium niobate-silicon nitride hybrid platform are numerically proposed for the first time, to the best of our knowledge. By utilizing the lateral leakage of a shallowly etched rib waveguide, 1-mm-long TE/TM-pass polarizers with high extinction ratios of 28.72/24.03 dB are obtained. Because of the anisotropy of the lithium niobate, the lateral leakage of TE/TM polarization modes can occur along crystallographic z/y directions, respectively. Such TE/TM-pass polarizers can be integrated in the same wafer.

TE/TM-pass polarizers based on lateral leakage in a thin film lithium niobate-silicon nitride hybrid platform: publisher's note.

This publisher's note contains a correction to Opt. Lett.45, 4915 (2020)OPLEDP0146-959210.1364/OL.404197.

Enhanced piezoelectric effect at the edges of stepped molybdenum disulfide nanosheets.

The development of piezoelectric layered materials may be one of the key elements enabling expansion of nanotechnology, as they offer a solution for the construction of efficient transducers for a wide range of applications, including self-powered devices. Here, we investigate the piezoelectric effect in multilayer (ML) stepped MoS2 flakes obtained by liquid-phase exfoliation, which is especially interesting because it may allow the scalable fabrication of electronic devices using large area deposition techniques (e.g. solution casting, spray coating, inkjet printing). By using a conductive atomic force microscope we map the piezoelectricity of the MoS2 flakes at the nanoscale. Our experiments demonstrate the presence of electrical current densities above 100 A cm-2 when the flakes are strained in the absence of bias, and the current increases proportional to the bias. Simultaneously collected topographic and current maps demonstrate that the edges of stepped ML MoS2 flakes promote the piezoelectric effect, where the largest currents are observed. Density functional theory calculations are consistent with the ring-like piezoelectric potential generated when the flakes are strained, as well as the enhanced piezoelectric effect at edges. Our results pave the way to the design of piezoelectric devices using layered materials.

Slowing down DNA translocation through solid-state nanopores by pressure.

The effect of applied pressure on event duration distributions in 3 kb dsDNA translocation is systematically investigated. The effects of pressure magnitude and nanopore size on the length discrimination between 615 bp and 1.14 kbp dsDNA is studied. The pressure-controlled DNA translocation in solid-state nanopores makes a significant contribution to improve the temporal resolution in DNA single-molecule detection.

Boron nitride nanopores: highly sensitive DNA single-molecule detectors.

The first electronic measurement of DNA translocation through ultrathin BN nanopores is demonstrated. BN nanopores show much higher detection sensitivity compared with SiN nanopores. BN has a spatial resolution as graphene. The ultrathin BN nanopores provide substantial opportunities in realizing high-spatial-sensitivity nanopore electrical devices for various applications.

Directional emission InP/GaInAsP square-resonator microlasers.

InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mum-side square microlaser with a 2-mum-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0x10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA.