Femtosecond laser upgrading the quality of bismuth films to enhance ultra-broadband photodetection.

Topological insulator bismuth has attracted considerable attention for the fabrication of room-temperature, wide bandwidth, and high-performance photodetectors due to the gapless edge state and insulating bulk state properties. However, both the photoelectric conversion and carrier transportation of the bismuth films are extremely affected by the surface morphology and grain boundaries to limit optoelectronic properties further. Here, we demonstrate a strategy of femtosecond laser treatment for upgrading the quality of bismuth films. After the treatment with proper laser parameters, the measurement of average surface roughness can be reduced from Ra = 44 nm to 6.9 nm, especially with accompany of the evident grain boundary elimination. Consequently, the photoresponsivity of the bismuth films increases approximately 2 times within an ultra-broad spectrum range from the visible to mid-infrared. This investigation suggests that the femtosecond laser treatment can help to benefit the performance of topological insulator ultra-broadband photodetectors.

Metasurface Enabled Photothermoelectric Photoresponse of Semimetal Cd3As2 for Broadband Photodetection.

The artificial engineering of photoresponse is crucial for optoelectronic applications, especially for photodetectors. Here, we designed and fabricated a metasurface on a semimetallic Cd3As2 nanoplate to improve its thermoelectric photoresponse. The metasurface can enhance light absorption, resulting in a temperature gradient. This temperature gradient can contribute to thermoelectric photoresponse through the photothermoelectric effect. Furthermore, power-dependent measurements showed a linearly dependent photoresponse of the Cd3As2 metasurface device, indicating a second-order photocurrent response. Wavelength-dependent measurements showed that the metasurface can efficiently separate photoexcited carriers in the broadband range of 488 nm to 4 µm. The photoresponse near the metasurface boundaries exhibits a responsivity of ∼1 mA/W, which is higher than that near the electrode junctions. Moreover, the designed metasurface device provided an anisotropic polarization-dependent photoresponse rather than the isotropic photoresponse of the original Cd3As2 device. This study demonstrates that metasurfaces have excellent potential for artificial controllable photothermoelectric photoresponse of various semimetallic materials.

Unveiling Weyl-related optical responses in semiconducting tellurium by mid-infrared circular photogalvanic effect.

Elemental tellurium, conventionally recognized as a narrow bandgap semiconductor, has recently aroused research interests for exploiting Weyl physics. Chirality is a unique feature of Weyl cones and can support helicity-dependent photocurrent generation, known as circular photogalvanic effect. Here, we report circular photogalvanic effect with opposite signs at two different mid-infrared wavelengths which provides evidence of Weyl-related optical responses. These two different wavelengths correspond to two critical transitions relating to the bands of different Weyl cones and the sign of circular photogalvanic effect is determined by the chirality selection rules within certain Weyl cone and between two different Weyl cones. Further experimental evidences confirm the observed response is an intrinsic second-order process. With flexibly tunable bandgap and Fermi level, tellurium is established as an ideal semiconducting material to manipulate and explore chirality-related Weyl physics in both conduction and valence bands. These results are also directly applicable to helicity-sensitive optoelectronics devices.

Direct Light Orbital Angular Momentum Detection in Mid-Infrared Based on the Type-II Weyl Semimetal TaIrTe4.

The direct photocurrent detection capability of light orbital angular momentum (OAM) has recently been realized with topological Weyl semimetals, but it is limited to the near-infrared wavelength range. The extension of the direct OAM detection capability to the mid-infrared band, which is a wave band that plays an important role in a vast range of applications, has not yet been realized. This is because the photocurrent responses of most photodetectors are neither sensitive to the phase information nor efficient in the mid-infrared region. In this study, a photodetector based on the type-II Weyl semimetal tantalum iridium telluride (TaIrTe4 ) is designed with peculiar electrode geometries to directly detect the topological charge of the OAM using the orbital photogalvanic effect (OPGE). The results indicate that the helical phase gradient of light can be distinguished by a current winding around the optical beam axis, with a magnitude proportional to its quantized OAM mode number. The topologically enhanced responses in the mid-infrared region of TaIrTe4 further help overcome the low responsivity issues and finally render direct OAM detection capability. This study enables on-chip-integrated OAM detection, and thus OAM-sensitive focal plane arrays in the mid-infrared region.

Ultrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission.

The thermoelectric effects of topological semimetals have attracted tremendous research interest because many topological semimetals are excellent thermoelectric materials and thermoelectricity serves as one of their most important potential applications. In this work, we reveal the transient photothermoelectric response of Dirac semimetallic Cd3As2, namely the photo-Seebeck effect and photo-Nernst effect, by studying the terahertz (THz) emission from the transient photocurrent induced by these effects. Our excitation polarization and power dependence confirm that the observed THz emission is due to photothermoelectric effect instead of other nonlinear optical effect. Furthermore, when a weak magnetic field (~0.4 T) is applied, the response clearly indicates an order of magnitude enhancement on transient photothermoelectric current generation compared to the photo-Seebeck effect. Such enhancement supports an ambipolar transport nature of the photo-Nernst current generation in Cd3As2. These results highlight the enhancement of thermoelectric performance can be achieved in topological Dirac semimetals based on the Nernst effect, and our transient studies pave the way for thermoelectric devices applicable for high field circumstance when nonequilibrium state matters. The large THz emission due to highly efficient photothermoelectric conversion is comparable to conventional semiconductors through optical rectification and photo-Dember effect.