Wide Input Dynamic Range Fully Integrated Capacitive Sensor for Life Science Applications.

This paper presents a new fully integrated CMOS capacitance sensor chip with a wider input dynamic range (IDR) compared to the state-of-the-art, suitable for a variety of life science applications. With the novel differential capacitance to current conversion topology, it achieves an IDR of about seven times higher compared to the previous charge based capacitive measurement (CBCM) circuits and about three times higher compared to the CBCM with cascode current mirrors. It also features a calibration circuitry consisting of an array of switched capacitors, interdigitated electrodes (IDEs) realized on the topmost metal layer, a current-controlled 300 MHz oscillator, and a counter-serializer to create digital output. The proposed sensor, fabricated in AMS 0.35 µm CMOS technology, enables a high-resolution measurement, equal to 416 aF, of physiochemical changes in the IDE with up to 1.27 pF input offset adjustment range (IOAR). With a measurement speed of 15 µs, this sensor is among the fast CMOS capacitive sensors in the literature. In this paper, we demonstrate its functionality and applicability and present the experimental results for monitoring 2 µL evaporating droplets of chemical solvents. By using samples of solvents with different conductivity and relative permittivity, a wide range of capacitance and resistance variations in the sample-IDE interface electric equivalent model can be created. In addition, the evaporating droplet test has inherently fast dynamic changes. Based on the results, our proposed device addresses the challenge of detecting small capacitance changes despite large parasitic elements caused by the ions in the solution or by remnants deposited on the electrode.

PMMA-Based Wafer-Bonded Capacitive Micromachined Ultrasonic Transducer for Underwater Applications.

This article presents a new wafer-bonding fabrication technique for Capacitive Micromachined Ultrasonic Transducers (CMUTs) using polymethyl methacrylate (PMMA). The PMMA-based single-mask and single-dry-etch step-bonding device is much simpler, and reduces process steps and cost as compared to other wafer-bonding methods and sacrificial-layer processes. A low-temperature (< 180 ∘ C ) bonding process was carried out in a purpose-built bonding tool to minimize the involvement of expensive laboratory equipment. A single-element CMUT comprising 16 cells of 2.5 mm radius and 800 nm cavity was fabricated. The center frequency of the device was set to 200 kHz for underwater communication purposes. Characterization of the device was carried out in immersion, and results were subsequently validated with data from Finite Element Analysis (FEA). Results show the feasibility of the fabricated CMUTs as receivers for underwater applications.

Integrated HIFU Drive System on a Chip for CMUT-Based Catheter Ablation System.

Conventional High Intensity Focused Ultrasound (HIFU) is a therapeutic modality which is extracorporeally administered. In applications where a relatively small HIFU lesion is required, an intravascular HIFU probe can be deployed to the ablation site. In this paper, we demonstrate the design and implementation a fully integrated HIFU drive system on a chip to be placed on a 6 Fr catheter probe. An 8-element capacitive micromachined ultrasound transducer (CMUT) ring array of 2 mm diameter has been used as the ultrasound source. The driver chip is fabricated in 0.35 µm AMS high-voltage CMOS technology and comprises eight continuous-wave (CW) high-voltage CMUT drivers (10.9 ns and 9.4 ns rise and fall times at 20 V pp output into a 15 pF), an eight-channel digital beamformer (8-12 MHz output frequency with 11.25 ° phase accuracy) and a phase locked loop with an integrated VCO as a tunable clock source (128-192 MHz). The chip occupies 1.85 × 1.8 mm 2 area including input and output (I/O) pads. When the transducer array is immersed in sunflower oil and driven by the IC with eight 20 Vpp CW pulses at 10 MHz, real-time thermal images of the HIFU beam indicate that the focal temperature rises by 16.8  °C in 11 seconds. Each HV driver consumes around 67 mW of power when driving the CMUT array at 10 MHz, which adds up to 560 mW for the whole chip. FEM based analysis reveals that the outer surface temperature of the catheter is expected to remain below the 42  °C tissue damage limit during therapy.