RESUMO
The resolution of an angle-scanning technique for measuring transparent optical wafers is analyzed, and it is shown both theoretically and experimentally that subnanometer resolution can be readily achieved. Data are acquired simultaneously over the whole area of the wafer, producing two-dimensional thickness variation maps in as little as 10 s. Repeatabilities of 0.07 nm have been demonstrated, and wafers of up to 100 mm diameter have been measured, with 1 mm or better spatial resolution. A technique for compensating wafer and system aberrations is incorporated and analyzed.
RESUMO
Interferometric measurement techniques such as holographic interferometry and electronic speckle-pattern interferometry are valuable for measuring the deformation of objects. Conventional theoretical models of deformation measurement assume collimated illumination and telecentric imaging, which are usually only practical for small objects. Large objects often require divergent illumination, for which the models are valid only when the object is planar, and then only in the paraxial region. We present an analysis and discussion of the three-dimensional systematic sensitivity errors for both in-plane and out-of-plane interferometer configurations, where it is shown that the errors can be significant. A dimensionless approach is adopted to make the analysis generic and hence scalable to a system of any size.
