Open architecture time of flight 3D SWIR camera operating at 150 MHz modulation frequency.

In the past two decades 3-D cameras have proven to be one of the next revolutions in machine vision. However, these devices are still an emerging technology with a particularly narrow set of commercially available devices. In this paper, the concept and execution of the first short wavelength infrared (SWIR) time-of-flight (ToF) 3-D camera system operating at a wavelength of 1550 nm is presented. By decoupling the optical and electrical components of the system in an open architecture we not only surpass many of the limitations of an on-chip integrated solution, but also can easily change the imaging device based on the requirements of the application. We achieve modulation frequencies up to 150 MHz, which exceeds the conventional values currently published for other large format modulators by about five times. This increase in the modulation frequency allows for a TOF camera with significantly higher depth resolution, while the open architecture design allows for a highly reconfigurable device that can be modified for specific working conditions.

Demonstration of Shot-noise-limited Swept Source OCT Without Balanced Detection.

Optical coherence tomography (OCT) has been utilized in a rapidly growing number of clinical and scientific applications. In particular, swept source OCT (SS-OCT) has attracted many attentions due to its excellent performance. So far however, the limitations of existing photon detectors have prevented achieving shot-noise-limited sensitivity without using balanced-detection scheme in SS-OCT, even when superconducting single-photon detectors were used. Unfortunately, balanced-detection increases OCT system size and cost, as it requires many additional components to boost the laser power and maintain near ideal balanced performance across the whole optical bandwidth. Here we show for the first time that a photon detector is capable of achieving shot noise limited performance without using the balanced-detection technique in SS-OCT. We built a system using a so-called electron-injection photodetector, with a cutoff-wavelength of 1700 nm. Our system achieves a shot-noise-limited sensitivity of about -105 dB at a reference laser power of ~350 nW, which is more than 30 times lower laser power compared with the best-reported results. The high sensitivity of the electron-injection detector allows utilization of micron-scale tunable laser sources (e.g. VCSEL) and eliminates the need for fiber amplifiers and highly precise couplers, which are an essential part of the conventional SS-OCT systems.

Deep-UV microsphere projection lithography.

In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.

Integrated all-optical infrared switchable plasmonic quantum cascade laser.

We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 µm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 µm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wavelength light into the gap region, where the germanium is placed. The perturbation of refractive index of the germanium due to the free carrier absorption produced by short wavelength light changes the optical response of the antenna and the entire laser intensity at 6.1 µm significantly. This device shows a viable method to modulate the far field of a laser through a near field interaction.