Dual-tip magnetic force microscopy with suppressed influence on magnetically soft samples.

Standard magnetic force microscopy (MFM) is considered as a powerful tool used for magnetic field imaging at nanoscale. The method consists of two passes realized by the magnetic tip. Within the first one, the topography pass, the magnetic tip directly touches the magnetic sample. Such contact perturbs the magnetization of the sample explored. To avoid the sample touching the magnetic tip, we present a new approach to magnetic field scanning by segregating the topological and magnetic scans with two different tips located on a cut cantilever. The approach minimizes the disturbance of sample magnetization, which could be a major problem in conventional MFM images of soft magnetic samples. By cutting the cantilever in half using the focused ion beam technique, we create one sensor with two different tips--one tip is magnetized, and the other one is left non-magnetized. The non-magnetized tip is used for topography and the magnetized one for the magnetic field imaging. The method developed we call dual-tip magnetic force microscopy (DT-MFM). We describe in detail the dual-tip fabrication process. In the experiments, we show that the DT-MFM method reduces significantly the perturbations of the magnetic tip as compared to the standard MFM method. The present technique can be used to investigate microscopic magnetic domain structures in a variety of magnetic samples and is relevant in a wide range of applications, e.g., data storage and biomedicine.

50-nm local anodic oxidation technology of semiconductor heterostructures.

A novel approach to local anodic oxidation technique, which leads to approximately equal 50 nm wide line patterns, is described. The technique is utilized to prepare quantum point contact on a low-mobility semiconductor heterostructure. Transport measurements show quantized conductance in zero magnetic field at 4.2 K thanks to very short one-dimensional constriction. The technique is also used for the definition of low-to-room temperature sub-micrometer Hall probes to show its applicability for the room temperature applications. The magnetic-field resolution and the sensitivity of the probes are evaluated in dependence of the probe dimensions, bias current, and temperature. The 200-nm probe shows magnetic-field resolution of 47 microT/(Hz)(1/2) at 140 Hz and at 4.2 K, when it is driven by 5 microA bias current. The novel approach is promising for the development of the future nano-devices operated both at low and room temperatures. To our knowledge, local anodic oxidation technique applied directly to shallow semiconductor heterostructure has been successfully used for the room temperature application for the first time.