RESUMO
We studied the loss compensation of surface plasmon polaritons (SPPs) with InGaAsP quantum wells at telecom wavelength. The quantum wells are buried in the vicinity of a thin Au film. The propagation length of short-range SPPs increases drastically with the gain coefficient of quantum wells, generated by a forward bias. The elongation of SPP propagation is experimentally observed via long-range SPPs, which strongly couple with the short-range SPPs. This study paves a way for electrically manipulated amplification of SPPs in plasmonic circuits.
RESUMO
We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.
