Ordered porous diamond films fabricated by colloidal crystal templating.

We have developed a colloidal crystal templating method for preparation of diamond films with 2D and 3D ordered porous structures. The technological process involved breaks down into (a) impregnation into the pores of silica colloidal crystal (opal) films of detonation nanodiamond (DND) particles from their hydrosol; (b) microwave plasma-enhanced chemical vapor deposition (MWPECVD) regrowth with diamond of pores with high DND filling; (c) Ar(+) ion dry etching of fragments of shells of coalesced diamond crystallites which form in the course of MWPECVD on the surface of the SiO(2) beads making up the outer surface of a film and (d) wet etching of the SiO(2) template in aqueous HF solution. The final samples are either connected to the substrate or free-standing films of various thicknesses having 2D or 3D ordered porous structures. The morphology of the diamond films fabricated by this method replicates the pore network of the opal template. Raman measurements confirm the diamond structure of the synthesized ordered porous material.

Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111).

A series of 3C-SiC films have been grown by a novel method of solid-gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.

Emitting a-SiO(x)(Er) films and a-SiO(x)(Er)/a-Si:H microcavities doped with Er by remote magnetron sputtering technique.

We have developed the technique of growing amorphous a-SiO(x)(Er) films and a-SiO(x)(Er)/a-Si:H multilayer structures based on spatially separating the processes of the decomposition of an oxygen-silane gas mixture in an rf glow discharge plasma and remote magnetron sputtering of an Er target. This approach allows us to control independently the film deposition rate, the Er-ion concentration and its depth distribution in the film. Time-resolved photoluminescence measurements have shown that films and planar microcavities with an Er-doped active layer exhibit internal quantum efficiency for Er ion emission of ∼75%. The method that we suggest is a way of producing effectively emitting microcavity structures, in which the distribution profile of emission centers coincides with that of the electromagnetic field in individual layers of the structure.

Polarization splitting of optical resonant modes in a-Si:H/a-SiO(x):H microcavities.

We present experimental and theoretical results on polarization splitting of optical resonant modes in a-Si:H/a-SiO(x):H microcavities. It is shown experimentally that the splitting sign and value can be controlled by varying the active layer thickness. The polarization splitting achieved in the microcavities is about 8 meV owing to a large optical contrast, which is the ratio of film refractive indices in the distributed Bragg reflectors. The experimental data and theoretical analysis show that the polarization splitting may be zero at a certain angle of incidence of light determined by the microcavity parameters. The measured and calculated resonant frequency values for TM and TE polarizations were used to find the optical thickness of the active layer and the stop-band center frequency of the Bragg reflector. The account of the active layer thickness fluctuations along the lateral direction provides a better fit between the experimental and theoretical spectra.