Magnetization switching in high-density magnetic nanodots by a fine-tune sputtering process on a large-area diblock copolymer mask.

Ordered magnetic nanodot arrays with extremely high density provide unique properties to the growing field of nanotechnology. To overcome the size limitations of conventional lithography, a fine-tuned sputtering deposition process on mesoporous polymeric template fabricated by diblock copolymer self-assembly is herein proposed to fabricate uniform and densely spaced nanometer-scale magnetic dot arrays. This process was successfully exploited to pattern, over a large area, sputtered Ni80Fe20 and Co thin films with thicknesses of 10 and 13 nm, respectively. Carefully tuned sputter-etching at a suitable glancing angle was performed to selectively remove the magnetic material deposited on top of the polymeric template, producing nanodot arrays (dot diameter about 17 nm). A detailed study of magnetization reversal at room temperature as a function of sputter-etching time, together with morphology investigations, was performed to confirm the synthesis of long-range ordered arrays displaying functional magnetic properties. Magnetic hysteresis loops of the obtained nanodot arrays were measured at different temperatures and interpreted via micromagnetic simulations to explore the role of dipole-dipole magnetostatic interactions between dots and the effect of magnetocrystalline anisotropy. The agreement between measurements and numerical modelling results indicates the use of the proposed synthesis technique as an innovative process in the design of large-area nanoscale arrays of functional magnetic elements.

Neutral wetting brush layers for block copolymer thin films using homopolymer blends processed at high temperatures.

Binary homopolymer blends of two hydroxyl-terminated polystyrene (PS-OH) and polymethylmethacrylate (PMMA-OH) homopolymers (Mn âˆ¼ 16000 g mol(-1)) were grafted on SiO2 substrates by high-temperature (T > 150 °C), short-time (t < 600 s) thermal treatments. The resulting brush layer was tested to screen preferential interactions of the SiO2 substrate with the different symmetric and asymmetric PS-b-PMMA block copolymers deposited on top of the grafted molecules. By properly adjusting the blend composition and the processing parameters, an efficient surface neutralization path was identified, enabling the formation, in the block copolymer film, of homogeneous textures of lamellae or cylinders perpendicularly oriented with respect to the substrate. A critical interplay between the phase segregation of the homopolymer blends and their grafting process on the SiO2 was observed. In fact, the polar SiO2 is preferential for the PMMA-rich phase that forms a homogeneous layer on the substrate, while the PS-rich phase is located at the polymer-air interface. During the thermal treatment, phase segregation and grafting proceed simultaneously. Complete wetting of the PS rich phase on the PMMA rich phase leads to the formation of a PS/PMMA bilayer. In this case, the progressive diffusion of PS chains toward the polymer-SiO2 interface during the thermal treatment allows tuning of the brush layer composition.

High aspect ratio PS-b-PMMA block copolymer masks for lithographic applications.

The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC) thick films is a crucial technological issue. Perpendicular orientation of the nanostructures in symmetric and asymmetric poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer films obtained by means of simple thermal treatments was demonstrated to occur in well-defined thickness windows featuring modest maximum values, thus resulting in low aspect ratio (h/d < 2) of the final lithographic mask. In this manuscript, the thickness window corresponding to the perpendicular orientation of the cylindrical structures in asymmetric DBC is investigated at high temperatures (190 °C ≤ T ≤ 310 °C) using a rapid thermal processing machine. A systematic study of the annealing conditions (temperature and time) of asymmetric PS-b-PMMA (Mn = 67.1, polydispersity index = 1.09) films, with thicknesses ranging from 10 to 400 nm, allowed ordered patterns, with a maximum value of orientational correlation length of 350 nm, to be obtained for film thicknesses up to 200 nm. The complete propagation of the cylindrical structures through the whole film thickness in a high aspect ratio PS template (h/d ≈ 7) is probed by lift-off process. Si nanopillars are obtained having the same lateral ordering and characteristic dimensions of the DBC lithographic mask as further confirmed by grazing-incidence small-angle X-ray scattering experiments.

Rapid thermal processing of self-assembling block copolymer thin films.

Self-assembling block copolymers generate nanostructured patterns which are useful for a wide range of applications. In this paper we demonstrate the capability to control the morphology of the self-assembling process of PS-b-PMMA diblock copolymer thin films on unpatterned surfaces by means of fast thermal treatment performed in a rapid thermal processing machine. The methodology involves the use of radiation sources in order to rapidly drive the polymeric film above the glass transition temperature. Highly ordered patterns were obtained for perpendicular-oriented cylindrical and lamellar PS-b-PMMA block copolymers in less than 60 s. This approach offers the unprecedented opportunity to investigate in detail the kinetics of the block copolymer self-assembly during the early stages of the process, providing a much deeper understanding of the chemical and physical phenomena governing these processes.

Collective behavior of block copolymer thin films within periodic topographical structures.

We perform a systematic study of the effect of adjacent nanostructures on the confinement of block copolymers (BCP) within pre-patterned trenches in 100 nm thick SiO2 films. Asymmetric PS-b-PMMA BCP with a styrene fraction of 0.71, Mn = 67100 are used. When deposited in the form of thin film, these BCP naturally self-organize upon annealing and form a PS matrix with hexagonally packed PMMA cylinders perpendicularly oriented with respect to the substrate. An accurate study of the confinement of this BCP thin film within isolated trenches is performed as a function of their width (80-260 nm). In this specific configuration the confinement of the BCP thin film within the pre-patterned structures has only been partially achieved. The effect of adjacent trenches on the arrangement of the BCP thin film is investigated using parallel trenches periodically distributed on the surface. The effective confinement of the BCP film is strongly modified by the periodicity of the pre-patterned structures.

Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip.

An integrated erbium-based light emitting diode has been realized in a waveguide configuration allowing 1.54 µm light signal routing in silicon photonic circuits. This injection device is based on an asymmetric horizontal slot waveguide where the active slot material is Er(3+) in SiO2 or Er(3+) in Si-rich oxide. The active horizontal slot waveguide allows optical confinement, guiding and lateral extraction of the light for on-chip distribution. Light is then coupled through a taper section to a passive Si waveguide terminated by a grating which extracts (or inserts) the light signal for measuring purposes. We measured an optical power density in the range of tens of µW/cm(2) which follows a super-linear dependence on injected current density. When the device is biased at high current density, upon a voltage pulse (pump signal), free-carrier and space charge absorption losses become large, attenuating a probe signal by more than 60 dB/cm and thus behaving conceptually as an electro-optical modulator. The integrated device reported here is the first example, still to be optimized, of a fundamental block to realize an integrated silicon photonic circuit with monolithic integration of the light emitter.

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides.

Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 µW. All these performances suggest the usage of these devices as electro-optical modulators.

Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation.

The electroluminescence (EL) at 1.54 µm of metal­oxide­semiconductor (MOS) devices withEr3C ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3C emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3C is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3C ions. On the contrary, direct impact excitation of Er3C by hot injected carriers starts at the Fowler­Nordheim injection threshold (above 5 MV cm(-1)) and dominates for high-field APV excitation.