1/f frequency noise of 2-GHZ high-Q thin-film sapphire resonators.

We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20,000 was estimated from the phase response. The results show that the FM noise of the resonators varied between Sy (10 Hz) = -202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from [symbol: see text](10 Hz) = -39 to -47 dBc/Hz.

Microwave regenerative frequency dividers with low phase noise.

We demonstrate regenerative divide-by-two (halver) circuits with very low phase modulation (PM) noise at input frequencies of 18.4 GHz and 39.8 GHz. The PM noise of the 18.4 to 9.2 GHz divider pair was L(10 Hz)=-134 dB below the carrier in a 1 Hz bandwidth (dBc/Hz) and L(10 MHz)=-166 dBc/Hz, and the PM noise of the 39.8 GHz to 19.9 GHz divider pair was L(10 Hz)=-122 dBc/Hz and L(10 MHz)=-167 dBc/Hz.

Origin of 1/f PM and AM noise in bipolar junction transistor amplifiers.

In this paper we report the results of extensive research on phase modulation (PM) and amplitude modulation (AM) noise in linear bipolar junction transistor (BJT) amplifiers. BJT amplifiers exhibit 1/f PM and AM noise about a carrier signal that is much larger than the amplifiers thermal noise at those frequencies in the absence of the carrier signal. Our work shows that the 1/f PM noise of a BJT based amplifier is accompanied by 1/f AM noise which can be higher, lower, or nearly equal, depending on the circuit implementation. The 1/f AM and PM noise in BJTs is primarily the result of 1/f fluctuations in transistor current, transistor capacitance, circuit supply voltages, circuit impedances, and circuit configuration. We discuss the theory and present experimental data in reference to common emitter amplifiers, but the analysis can be applied to other configurations as well. This study provides the functional dependence of 1/f AM and PM noise on transistor parameters, circuit parameters, and signal frequency, thereby laying the groundwork for a comprehensive theory of 1/f AM and PM noise in BJT amplifiers. We show that in many cases the 1/f PM and AM noise can be reduced below the thermal noise of the amplifier.

Guidelines for designing BJT amplifiers with low 1/f AM and PM noise.

In this paper we discuss guidelines for designing linear bipolar junction transistor amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented.