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Nature ; 416(6883): 810, 2002 Apr 25.
Artigo em Inglês | MEDLINE | ID: mdl-11976673

RESUMO

Johnson suggests that our results are not due to spin transport but rather are caused by spurious effects, in particular the anisotropic magneto resistance of the ferromagnetic contacts. However, our experiment was designed explicitly to eliminate any magneto-resistance effects that might arise from the ferromagnetic contacts.

3.
Nature ; 416(6882): 713-6, 2002 Apr 18.
Artigo em Inglês | MEDLINE | ID: mdl-11961548

RESUMO

To study and control the behaviour of the spins of electrons that are moving through a metal or semiconductor is an outstanding challenge in the field of 'spintronics', where possibilities for new electronic applications based on the spin degree of freedom are currently being explored. Recently, electrical control of spin coherence and coherent spin precession during transport was studied by optical techniques in semiconductors. Here we report controlled spin precession of electrically injected and detected electrons in a diffusive metallic conductor, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The output voltage of our device is sensitive to the spin degree of freedom only, and its sign can be switched from positive to negative, depending on the relative magnetization of the ferromagnetic electrodes. We show that the spin direction can be controlled by inducing a coherent spin precession caused by an applied perpendicular magnetic field. By inducing an average precession angle of 180 degrees, we are able to reverse the sign of the output voltage.

4.
Nature ; 410(6826): 345-8, 2001 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-11268205

RESUMO

Finding a means to generate, control and use spin-polarized currents represents an important challenge for spin-based electronics, or 'spintronics'. Spin currents and the associated phenomenon of spin accumulation can be realized by driving a current from a ferromagnetic electrode into a non-magnetic metal or semiconductor. This was first demonstrated over 15 years ago in a spin injection experiment on a single crystal aluminium bar at temperatures below 77 K. Recent experiments have demonstrated successful optical detection of spin injection in semiconductors, using either optical injection by circularly polarized light or electrical injection from a magnetic semiconductor. However, it has not been possible to achieve fully electrical spin injection and detection at room temperature. Here we report room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips. We anticipate that larger signals should be obtainable by optimizing the choice of materials and device geometry.

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