RESUMO
We have developed a two-measure system for evaluating light sources' color rendition that builds upon conceptual progress of numerous researchers over the last two decades. The system quantifies the color fidelity and color gamut (change in object chroma) of a light source in comparison to a reference illuminant. The calculations are based on a newly developed set of reflectance data from real samples uniformly distributed in color space (thereby fairly representing all colors) and in wavelength space (thereby precluding artificial optimization of the color rendition scores by spectral engineering). The color fidelity score R(f) is an improved version of the CIE color rendering index. The color gamut score R(g) is an improved version of the Gamut Area Index. In combination, they provide two complementary assessments to guide the optimization of future light sources. This method summarizes the findings of the Color Metric Task Group of the Illuminating Engineering Society of North America (IES). It is adopted in the upcoming IES TM-30-2015, and is proposed for consideration with the International Commission on Illumination (CIE).
RESUMO
Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional LEDs. Here we explain why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability. From the extremely short positron diffusion lengths (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that localizing valence states associated with atomic condensates of In-N preferentially capture holes, which have a positive charge similar to positrons. The holes form localized excitons to emit the light, although some of the excitons recombine at non-radiative centres. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.
