RESUMO
Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion's motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.
RESUMO
We dispersively couple a single trapped ion to an optical cavity to extract information about the cavity photon-number distribution in a nondestructive way. The photon-number-dependent ac Stark shift experienced by the ion is measured via Ramsey spectroscopy. We use these measurements first to obtain the ion-cavity interaction strength. Next, we reconstruct the cavity photon-number distribution for coherent states and for a state with mixed thermal-coherent statistics, finding overlaps above 99% with the calibrated states.