RESUMO
In this study we successfully applied the ζ-factor method to perform quantitative X-ray analysis of organic thin films consisting of light elements. With its ability to intrinsically correct for X-ray absorption, this method significantly improved the quality of the quantification as well as the accuracy of the results compared to conventional techniques in particular regarding the quantification of light elements. We describe in detail the process of determining sensitivity factors (ζ-factors) using a single standard specimen and the involved parameter optimization for the estimation of ζ-factors for elements not contained in the standard. The ζ-factor method was then applied to perform quantitative analysis of organic semiconducting materials frequently used in organic electronics. Finally, the results were verified and discussed concerning validity and accuracy.
RESUMO
This study shows that the morphology of organic/metal interfaces strongly depends on process parameters and the involved materials. The interface between organic n-type blocking layer materials and the top Ag cathode within an organic photodiode was investigated. Ag was deposited on either amorphous tris-8-hydroxyquinolinato-aluminum (Alq(3)) or crystalline 4,7-diphenyl-1,10-phenanthroline (Bphen) using different deposition techniques such as electron beam deposition, ion beam sputtering, and vacuum thermal evaporation at various deposition rates. The interfaces were studied by transmission electron microscopy and X-ray reflectivity. It was found that Bphen does not show any Ag diffusion no matter which deposition technique was used, whereas the Ag diffusion into Alq(3) depends on the deposition technique and the deposition rate. The highest amount of Ag diffusion into Alq(3) occurred by using thermal vacuum deposition at low deposition rates.
