Real-time measurement of parametric influences on the refractive index and length changes in silica optical fibers.

In this paper, we present a simple cascaded Fabry-Perot interferometer (FPI) that can be used to measure in real-time the refractive index (RI) and length variation in silica optical fibers caused due to external physical parameters, such as temperature, strain, and radiation. As a proof-of-concept, we experimentally demonstrate real-time monitoring of temperature effects on the RI and length and measure the thermo-optic coefficient (TOC) and thermal expansion coefficient (TEC) by using the cascaded FPI within a temperature range of 21-486°C. The experimental results provide a TEC of 5.53 × 10-7/°C and TOC of 4.28 × 10-6/°C within the specified temperature range. Such a simple cascaded FPI structure will enable the design of optical sensors to correct for measurement errors by understanding the change in RI and length of optical fiber caused by environment parameters.

Active Compensation of Radiation Effects on Optical Fibers for Sensing Applications.

Neutron and gamma irradiation is known to compact silica, resulting in macroscopic changes in refractive index (RI) and geometric structure. The change in RI and linear compaction in a radiation environment is caused by three well-known mechanisms: (i) radiation-induced attenuation (RIA), (ii) radiation-induced compaction (RIC), and (iii) radiation-induced emission (RIE). These macroscopic changes induce errors in monitoring physical parameters such as temperature, pressure, and strain in optical fiber-based sensors, which limit their application in radiation environments. We present a cascaded Fabry-Perot interferometer (FPI) technique to measure macroscopic properties, such as radiation-induced change in RI and length compaction in real time to actively account for sensor drift. The proposed cascaded FPI consists of two cavities: the first cavity is an air cavity, and the second is a silica cavity. The length compaction from the air cavity is used to deduce the RI change within the silica cavity. We utilize fast Fourier transform (FFT) algorithm and two bandpass filters for the signal extraction of each cavity. Inclusion of such a simple cascaded FPI structure will enable accurate determination of physical parameters under the test.

Numerical Analysis of Radiation Effects on Fiber Optic Sensors.

Optical fiber sensors (OFS) are a potential candidate for monitoring physical parameters in nuclear environments. However, under an irradiation field the optical response of the OFS is modified via three primary mechanisms: (i) radiation-induced attenuation (RIA), (ii) radiation-induced emission (RIE), and (iii) radiation-induced compaction (RIC). For resonance-based sensors, RIC plays a significant role in modifying their performance characteristics. In this paper, we numerically investigate independently the effects of RIC and RIA on three types of OFS widely considered for radiation environments: fiber Bragg grating (FBG), long-period grating (LPG), and Fabry-Perot (F-P) sensors. In our RIC modeling, experimentally calculated refractive index (RI) changes due to low-dose radiation are extrapolated using a power law to calculate density changes at high doses. The changes in RI and length are subsequently calculated using the Lorentz-Lorenz relation and an established empirical equation, respectively. The effects of both the change in the RI and length contraction on OFS are modeled for both low and high doses using FIMMWAVE, a commercially available vectorial mode solver. An in-depth understanding of how radiation affects OFS may reveal various potential OFS applications in several types of radiation environments, such as nuclear reactors or in space.

Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces.

This work presents a direct measurement of the Kapitza thermal boundary resistance Rth, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels. The substrate thermal diffusivity was found via a hybrid frequency/spatial domain thermoreflectance set up. The films and the interfaces between the two layers were characterized using scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy. X-ray diffraction was also used to determine the atomic and molecular structures of the samples. The results display an effect of the annealing process on the Kapitza resistance and on the thermal diffusivities of the coatings, related to material and interface changes. The influence of the substrate doping levels on the Kapitza resistance is studied to check the correlation between the Schottky barrier and the interfacial heat conduction. It is suggested that the presence of charge carriers in silicon may create new channels for heat conduction at the interface, with an efficiency depending on the difference between the metal's and substrate's work functions.