A silicon carbide nanowire field effect transistor for DNA detection.

This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 µm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

Bio-functionalization of silicon carbide nanostructures for SiC nanowire-based sensors realization.

The bio-functionalization process consisting in grafting desoxyribo nucleic acid via aminopropyl-triethoxysilane is performed on several kinds of silicon carbide nanostructures. Prior, the organic layer is characterized on planar surface with fluorescence microscopy and X-ray photoelectron spectroscopy. Then, the functionalization is performed on two kinds of nanopillar arrays. One is composed of top-down SiC nanopillars with a wide pitch of 5 microm while the other one is a dense array (pitch: 200 nm) of core-shell Si-SiC nanowires obtained by carburization of silicon nanowires. Depending on both the pillar morphology and the pitch, different results in term of DNA surface coverages are obtained, as seen from fluorescence microscopy images. Particularly, in the case of the wide pitch array, it has been shown that the DNA molecules are located all along the nanopillars. To achieve a DNA sensor based on a nanowire-field effect transistor, the functionalization must be conducted on a single SiC nanowire or nanopillar that constitutes the channel of the field effect transistor. The localization of the functionalization in a small area around the nanostructures guarantees high performances to the sensor. In this aim, the functionalization process is combined with common microelectronics techniques of lithography and lift-off. The DNA immobilization is investigated by fluorescence microscopy and atomic force microscopy.