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1.
Opt Express ; 27(17): 23775-23784, 2019 Aug 19.
Artigo em Inglês | MEDLINE | ID: mdl-31510277

RESUMO

A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient ßTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.

2.
Opt Express ; 27(2): 753-760, 2019 Jan 21.
Artigo em Inglês | MEDLINE | ID: mdl-30696156

RESUMO

We report a novel design of an all-silicon temperature-independent filter employing a Mach-Zehnder interferometer (MZI) with multimode waveguides. The two arms of the MZI have equal lengths and equal widths but propagate different modes having different effective indices to guarantee an optical path difference (OPD) but similar temperature-dependence to diminish any thermal shifts of the interference pattern. A temperature-independent MZI filter with only one channel is also proposed and experimentally demonstrated. Measurements verify the principle of operation and a low temperature sensitivity of -20 to 10 pm/°C in the C-band for both MZI filters is achieved. The one-channel MZI structure is furthermore employed to achieve a compact sensor exhibiting a high sensitivity of 826 nm/RIU (refractive index unit).

3.
Opt Express ; 26(2): 1055-1063, 2018 Jan 22.
Artigo em Inglês | MEDLINE | ID: mdl-29401978

RESUMO

Dense integration of photonic integrated circuits demands waveguides simultaneously fulfilling requirements on compactness, low loss, high nonlinearity, and capabilities for mass production. In this work, titanium dioxide waveguides with a thick core of 380 nm exhibiting a compact mode size (0.43 µm2) and a low loss (5.4 ± 1 dB/cm) at telecommunication wavelengths around 1550 nm have been fabricated and measured. A microring resonator having a 50 µm radius has been measured to have a loaded quality factor of 53500. Four-wave mixing experiments reveal a nonlinear parameter for the waveguides of 21-34 W-1 m-1 corresponding to a nonlinear index around 2.3-3.6 x 10-18 m2/W, which results in a wavelength conversion efficiency of -36.2 dB. These performances, together with the potentially simple dispersion engineering to the fabricated waveguides by the post processes, yield a strong promise for the titanium dioxide waveguides applied in photonic integrated circuits, especially for nonlinear implementations.

4.
Opt Express ; 24(15): 16349-56, 2016 Jul 25.
Artigo em Inglês | MEDLINE | ID: mdl-27464088

RESUMO

We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (~80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high as 775 pm/°C. The proposed design is found to be design-flexible and robust to fabrication errors.

5.
Opt Express ; 24(15): 16866-73, 2016 Jul 25.
Artigo em Inglês | MEDLINE | ID: mdl-27464138

RESUMO

We design and experimentally verify a topology optimized low-loss and broadband two-mode (de-)multiplexer, which is (de-)multiplexing the fundamental and the first-order transverse-electric modes in a silicon photonic wire. The device has a footprint of 2.6 µm x 4.22 µm and exhibits a loss <1.2 dB in a 100 nm bandwidth measured around 1570 nm. The measured cross talk is <-12 dB and the extinction ratio is >14 dB in the C-band. Furthermore, we demonstrate that the design method can be expanded to include more modes, in this case including also the second order transverse-electric mode, while maintaining functionality.

6.
Opt Lett ; 40(16): 3893-6, 2015 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-26274687

RESUMO

An ultra-compact and broadband higher order-mode pass filter in a 1D photonic crystal silicon waveguide is proposed and experimentally demonstrated. The photonic crystal is designed for the lower order mode to work in the photonic band gap, while the higher order mode is located in the air band. Consequently, light on the lower order mode is prohibited to pass through the filter, while light on a higher order mode can be converted to a Bloch mode in the photonic crystal and pass through the filter with low insertion loss. As an example, we fabricate a ∼15-µm-long first-order-mode pass filter that filters out the fundamental mode and provides a measured insertion loss of ∼1.8 dB for the first-order-mode pass signals. The extinction ratio is measured to be around 50 dB (with a variation of ±10 dB due to the detection limitation of the measurement setup) in the measured wavelength range from 1480 to 1580 nm. Additionally, calculations predict the extinction ratio to be larger than 50 dB in a 170 nm broad bandwidth.

7.
Opt Express ; 22(7): 8525-32, 2014 Apr 07.
Artigo em Inglês | MEDLINE | ID: mdl-24718224

RESUMO

We have designed and for the first time experimentally verified a topology optimized mode converter with a footprint of ~6.3 µm × ~3.6 µm which converts the fundamental even mode to the higher order odd mode of a dispersion engineered photonic crystal waveguide. 2D and 3D topology optimization is utilized and both schemes result in designs theoretically showing an extinction ratio larger than 21 dB. The 3D optimized design has an experimentally estimated insertion loss lower than ~2 dB in an ~43 nm bandwidth. The mode conversion is experimentally confirmed in this wavelength range by recording mode profiles using vertical grating couplers and an infrared camera. The experimentally determined extinction ratio is > 12 dB and is believed to be limited by the spatial resolution of our setup.

8.
Nano Lett ; 7(8): 2341-5, 2007 Aug.
Artigo em Inglês | MEDLINE | ID: mdl-17616232

RESUMO

A scanning near-field optical microscope (SNOM) is used to systematically study the properties of guided modes in linear and slow-light regimes of silicon-on-insulator (SOI)-based photonic crystal waveguides (PhCWs) with different terminations of the photonic lattice. High quality SNOM images are obtained for light at telecom wavelengths propagating in the PhCW, demonstrating directly, for the first time to our knowledge, drastic widening of the PhCW guided mode in the slow-light regime and excitation of surface waves at the PhCW interface along with their feeding into the guided mode for the lattice terminations corresponding to significantly reduced coupling loss.


Assuntos
Tecnologia de Fibra Óptica/instrumentação , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Nanotecnologia/instrumentação , Ressonância de Plasmônio de Superfície/instrumentação , Desenho de Equipamento , Análise de Falha de Equipamento , Tecnologia de Fibra Óptica/métodos , Luz , Nanotecnologia/métodos , Espalhamento de Radiação , Ressonância de Plasmônio de Superfície/métodos
9.
Opt Express ; 15(3): 1261-6, 2007 Feb 05.
Artigo em Inglês | MEDLINE | ID: mdl-19532355

RESUMO

We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern definition on a sub 30-nm scale in combination with a deep vertical silicon etch of the order of ~300 nm. The nanoimprint method offers a cost-efficient parallel fabrication process with state-of-the-art replication fidelity, comparable to direct electron beam writing.

10.
Opt Express ; 15(6): 3169-76, 2007 Mar 19.
Artigo em Inglês | MEDLINE | ID: mdl-19532555

RESUMO

A photonic-crystal waveguide sensor is presented for biosensing. The sensor is applied for refractive index measurements and detection of protein-concentrations. Concentrations around 10 mug/ml (0.15muMolar) are measured with excellent signal to noise ratio, and a broad, dynamic refractive index sensing range extending from air to high viscous fluids is presented.

11.
Opt Express ; 15(23): 15603-14, 2007 Nov 12.
Artigo em Inglês | MEDLINE | ID: mdl-19550848

RESUMO

Both quasi-TE and TM polarisation spectra for a silicon-on-insulator (SOI) waveguide are recorded over (1100-1700)nm using a broadband supercontinuum source. By studying both the input and output polarisation eigenstates we observe narrowband resonant cross coupling near the lowest quasi-TE mode cut-off. We also observe relatively broadband mixing between the two eigenstates to generate a complete photonic bandgap. By careful analysis of the output polarisation state we report on an inherent non-reciprocity between quasi TE and TM fundamental mode cross coupling. The nature of polarisation distinction in such bandgap structures is discussed in the context of polarisation scattering at an interface.

12.
Nature ; 441(7090): 199-202, 2006 May 11.
Artigo em Inglês | MEDLINE | ID: mdl-16688172

RESUMO

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized. The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon. Recently, however, a continuous-wave Raman silicon laser was demonstrated; if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, chi(2) approximately 15 pm V(-1), makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative.

13.
Opt Express ; 14(20): 9444-50, 2006 Oct 02.
Artigo em Inglês | MEDLINE | ID: mdl-19529330

RESUMO

We demonstrate a concept for tailoring the group velocity and dispersion properties for light propagating in a planar photonic crystal waveguide. By perturbing the holes adjacent to the waveguide core it is possible to increase the useful bandwidth below the light-line and obtain a photonic crystal waveguide with either vanishing, positive, or negative group velocity dispersion and semi-slow light. We realize experimentally a silicon-on-insulator photonic crystal waveguide having nearly constant group velocity ~c(0)/34 in an 11-nm bandwidth below the silica-line.

14.
Opt Lett ; 28(17): 1525-7, 2003 Sep 01.
Artigo em Inglês | MEDLINE | ID: mdl-12956367

RESUMO

We demonstrate highly efficient and spectrally flat broadband coupling in photonic crystal directional couplers. The result is obtained by use of a novel design with smaller holes between coparallel photonic crystal waveguides for efficient channel-to-channel coupling. The system studied is based on a planar hexagonal photonic crystal lattice of holes made in silicon-on-insulator material. Results from three-dimensional finite-difference time domain modeling are shown to closely match results measured on fabricated samples.

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