Quantized dispersion of two-dimensional magnetoplasmons detected by photoconductivity spectroscopy.

We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and the quantum Hall effect.

Fröhlich mass in GaAs-based structures.

The Fröhlich interaction is one of the main electron-phonon intrinsic interactions in polar materials originating from the coupling of one itinerant electron with the macroscopic electric field generated by any longitudinal optical (LO) phonon. Infrared magnetoabsorption measurements of doped GaAs quantum well structures have been carried out in order to test the concept of Fröhlich interaction and polaron mass in such systems. These new experimental results lead one to question the validity of this concept in a real system.

Magneto infrared absorption in high electron density GaAs quantum wells.

Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.

Images of the phonon propagation across twist-bonded crystals.

We investigate identical but twist-bonded crystals using phonon imaging techniques. As in homogeneous crystals, very anisotropic flux patterns are observed. However, the shape of the pattern depends dramatically on the respective twist angle. The observed phonon images in wafer bonded GaAs/GaAs and Si/Si samples are essentially consistent with the predictions of the acoustic mismatch model for defect-free interfaces, with the exception of GaAs wafers twist bonded at a 45 degrees angle where modes with large shear stress are missing, which indicates strong dislocation scattering.

Self-starting mode locking of a Nd:glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs.

We present a diode-pumped Nd:glass fiber laser, emitting at 1060 nm, that is passively mode locked by fast nonlinear loss in low-temperature-grown GaAs (LT-GaAs). This new mode-locking mechanism is based on intensity-dependent defocusing in LT-GaAs that occurs after nonresonant generation of free carriers by two-photon absorption. Mode locking is self-starting and produces pulses as short as 4.1 ps.