Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films.

RATIONALE: Although the structure of atomic switch Ge2Sb2Te5 (GST) thin films is well established, the composition of the clusters formed in the plasma plume during pulsed-laser deposition (PLD) is not known. Laser Desorption Ionization Time-of-Flight Mass Spectrometry (LDI-TOF MS) is an effective method for the generation and study of clusters formed by laser ablation of various solids and thus for determining their structural fragments. METHODS: LDI of bulk or PLD-deposited GST thin layers and of various precursors (Ge, Sb, Te, and Ge-Te or Sb-Te mixtures) using a nitrogen laser (337 nm) was applied while the mass spectra were recorded in positive and negative ion modes using a TOF mass spectrometer equipped with a reflectron while the stoichiometry of the clusters formed was determined via isotopic envelope analysis. RESULTS: The singly negatively or positively charged clusters identified from the LDI of GST were Ge, Ge2, GeTe, Ge2Te, Ten (n = 1-3), GeTe2, Ge2Te2, GeTe3, SbTe2, Sb2Te, GeSbTe2, Sb3Te and the low abundance ternary GeSbTe3, while the LDI of germanium telluride yielded Gem Ten (+) clusters (m = 1-3, n = 1-3). Several minor Ge-H clusters were also observed for pure germanium and for germanium telluride. Sbn clusters (n = 1-3) and the formation of binary TeSb, TeSb2 and TeSb3 clusters were detected when Sb2Te3 was examined. CONCLUSIONS: This is the first report that elucidates the stoichiometry of Gem Sbn Tep clusters formed in plasma when bulk or nano-layers of GST material are ablated. The clusters were found to be fragments of the original structure. The results might facilitate the development of PLD technology for this memory phase-change material.

Laser ablation of AgSbS(2) and cluster analysis by time-of-flight mass spectrometry.

Thin films of AgSbS(2) are important for phase-change memory applications. This solid is deposited by various techniques, such as metal organic chemical vapour deposition or laser ablation deposition, and the structure of AgSbS(2)(s), as either amorphous or crystalline, is already well characterized. The pulsed laser ablation deposition (PLD) of solid AgSbS(2) is also used as a manufacturing process. However, the processes in plasma have not been well studied. We have studied the laser ablation of synthesized AgSbS(2)(s) using a nitrogen laser of 337 nm and the clusters formed in the laser plume were identified. The ablation leads to the formation of various single charged ternary Ag(p)Sb(q)S(r) clusters. Negatively charged AgSbS(4) (-), AgSb(2)S(3) (-), AgSb(2)S(4) (-), AgSb(2)S(5) (-) and positively charged ternary AgSbS(+), AgSb(2)S(+), AgSb(2)S(2) (+), AgSb(2)S(3) (+) clusters were identified. The formation of several singly charged Ag(+), Ag(2) (-), Ag(3) (-), Sb(3) (+), Sb(3) (-), S(8) (+) ions and binary Ag(p)S(r) clusters such as AgSb(2) (-), Ag(3)S(-), SbS(r) (-) (r = 1-5), Sb(2)S(-), Sb(2)S(2) (-), Sb(3)S(r) (-) (r = 1-4) and AgS(2) (+), SbS(+), SbS(2) (+), Sb(2)S(+), Sb(2)S(2) (+), Sb(3)S(r) (+) (r = 1-4), AgSb(2) (+) was also observed. The stoichiometry of the clusters was determined via isotopic envelope analysis and computer modeling. The relation of the composition of the clusters to the crystal structure of AgSbS(2) is discussed.

In-situ measurement of reversible photodarkening in ion-conducting chalcohalide glass.

We report the kinetics of below band-gap light induced photodarkening in (80-x)GeS(2)-20Ga(2)S(3)-xAgI (x = 0 and 20 mol %) bulk chalcogenide glasses by measuring the time evolution of transmission spectra at every 10 milliseconds. The results prove clearly the enhancement of photosensivity upon doping of AgI compound in glasses. It is interesting to find that PD observed in AgI-doped glass totally disappears two hours later after the laser exposing even at room temperature. In significant contrast to 80GeS(2)-20Ga(2)S(3) glass that the metastable part of PD remains for a long time. We expect such a fast auto-recovery property in AgI-doped glass can be utilized for optical signal processing.

Chalcogenide coatings of Ge15Sb20S65 and Te20As30Se50.

Chalcogenide coatings are investigated to obtain either optical components for spectral applications or optochemical sensors in the mid-infrared. The deposition of Ge(15)Sb(20)S(65) and Te(20)As(30)Se(50) chalcogenide glasses is performed by two physical techniques: electron-beam and pulsed-laser deposition. The quality of the film is analyzed by scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy to characterize the morphology, topography, and chemical composition. The optical properties and optical constants are also determined. A CF(4) dry etching is performed on these films to obtain a channeled optical waveguide. For a passband filter made by electron-beam deposition, cryolite as a low-refractive-index material and chalcogenide glasses as high-refractive-index materials are used to favor a large refractive-index contrast. A shift of a centered wavelength of a photosensitive passband filter is controlled by illumination time.