Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Water as origin of hysteresis in zinc tin oxide thin-film transistors.

The hysteresis behavior of transparent zinc tin oxide (ZTO) thin film transistors (TFTs) is identified to be a result of short-term bias stress induced by the measurement. The related density of shallow defect states can be adjusted by the amount of water in the ambient. Time-resolved studies of the TFTs under varied ambient demonstrate that hysteresis can be immediately switched on and off by the adsorption and desorption of water, respectively. These findings are expected to be of general importance also for other oxide-based TFTs.

Highly sensitive determination of the polaron-induced optical absorption of organic charge-transport materials.

We examine polaron-induced absorption in organic transport materials using a highly sensitive measurement technique. A hole only device is embedded into a low-loss TE2 waveguide structure, and the current induced change of the waveguide absorption is measured. The exemplary study of 2,2('),7,7(')-tetrakis(N,N-diphenylamine)-9,9(')-spiro-bifluorene (S-TAD) reveals a very low polaron absorption cross section of sigma(p) < or = 2.6 x 10(-18) cm(2) for 560 nm < or = lambda < or = 660 nm. The accuracy of this data is unsurpassed by other techniques used for the unambiguous study of polaronic species in organic thin films.