Interaction-induced transition in the quantum chaotic dynamics of a disordered metal.

We demonstrate that a weakly disordered metal with short-range interactions exhibits a transition in the quantum chaotic dynamics when changing the temperature or the interaction strength. For weak interactions, the system displays exponential growth of the out-of-time-ordered correlator (OTOC) of the current operator. The Lyapunov exponent of this growth is temperature-independent in the limit of vanishing interaction. With increasing the temperature or the interaction strength, the system undergoes a transition to a non-chaotic behaviour, for which the exponential growth of the OTOC is absent. We conjecture that the transition manifests itself in the quasiparticle energy-level statistics and also discuss ways of its explicit observation in cold-atom setups.

Surface-dominated conduction up to 240 K in the Kondo insulator SmB6 under strain.

SmB6 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, proposed to be of non-trivial topological origin. However, the surface state dominates electrical conduction only below T∗ ≈ 4 K (ref. ), limiting its scientific investigation and device application. Here, we report the enhancement of T∗ in SmB6 under the application of tensile strain. With 0.7% tensile strain we report surface-dominated conduction at up to a temperature of 240 K, persisting even after the strain has been removed. This can be explained in the framework of strain-tuned temporal and spatial fluctuations of f-electron configurations, which might be generally applied to other mixed-valence materials. We note that this amount of strain can be induced in epitaxial SmB6 films via substrate in potential device applications.

A self-consistent theory for graphene transport.

We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities n(imp). For dirty samples (250 x 10(10) cm(-2) < n(imp) < 400 x 10(10) cm(-2)), the value of the minimum conductivity at low carrier density is indeed 4e(2)/h in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on n(imp), increasing to 8e(2)/h for n(imp) approximately 20 x 10(10) cm(-2). A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant.

Griffiths phase in diluted magnetic semiconductors.

We study the effects of disorder in the vicinity of the ferromagnetic transition in a diluted magnetic semiconductor in the strongly localized regime. We derive an effective polaron Hamiltonian, which leads to the Griffiths phase above the ferromagnetic transition point. The Griffiths-McCoy effects yield nonperturbative contributions to the dynamic susceptibility. We explicitly derive the long-time susceptibility, which has a pseudoscaling form, with the dynamic critical exponent being expressed through the percolation indices.

Disorder and quantum fluctuations in superconducting films in strong magnetic fields.

We find that the upper critical field in a two-dimensional disordered superconductor can increase essentially at low temperatures. This happens due to the formation of local superconducting islands weakly coupled via the Josephson effect. The distribution of the superconducting islands is derived. It is shown that the value of the critical field is determined by the interplay of the proximity effect and quantum phase fluctuations. The shift of the upper critical field is connected with the pinning properties of a superconductor.