GaBi alloy liquid metal ion source for microelectronics research.

A GaBi alloy liquid metal ion source has been studied. From an analysis of the source mass spectra as a function of emission current, a mechanism is suggested for the production of single- and double-charged ions. There is good agreement with the results of Swanson's investigations of a pure Bi source.

A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms.

Focused silicon beams are useful for direct write applications, e.g., lithography on silicon without the undesirable effect of substrate contamination. However, since pure silicon is not amenable to liquid metal ion source (LMIS) manufacture, a suitable alloy containing silicon has to be produced. This paper covers almost all fundamental aspects of a Au82Si18 eutectic, including the most detailed beam mass spectra reported to date of a AuSi source. A finding worthy of note in this investigation, manifested in the behaviour of the ion extraction voltage with temperature, is the abnormal behaviour of the surface tension coefficient of the alloy with temperature. An important deduction from this work, however, concerns the mechanisms responsible for the creation of doubly charged ions: reasons of self-consistency indicate that while Si2+ is directly field evaporated, Au2+ must form by the post-ionization of Au+. Finally, two different mechanisms seem to co-exist, as far as the production of cluster ions is concerned. While for cluster ions containing only a few atoms some sort of surface field-ionization mechanism might be responsible for their creation, for larger clusters, a droplet break-up mechanism, possibly by ion capture, seems very likely.

On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources.

This paper reports on an extensive study of the characteristics of AuGeSi and CoNd liquid metal alloy ion sources (Focused Ion Beams From Liquid Metal Ion Sources, Research Studies Press, Taunton, Somerset, UK, 1991). Such characteristics include current-voltage curves and ion beam mass spectra. A careful investigation has been undertaken where the emitter temperature is the main variable experimental parameter. Theoretical models, or theoretical attempts in certain cases, tend to support the experimental results. The experimental results, in conjunction with existing theories, suggest that simply for reasons of self-consistency two mechanisms must be operative for the production of doubly-charged ions from the AuGeSi source: direct field-evaporation and post-ionisation.