Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications.

The integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme. Nevertheless, to obtain operation for a wider range of wavelengths (O to C band) a thick stack of Ge/GeSi layers forming quantum wells is required, leading to a dramatic increase in the complexity linked to sub-micron waveguide coupling. In this work, we present a proof-of-concept integration between micro-metric waveguides, through the butt-coupling of a [Formula: see text] thick N-rich silicon nitride (SiN) waveguide with a [Formula: see text] thick silicon waveguide for O-band operation. A numerical analysis is conducted for the design of the waveguide-to-waveguide interface, with the aim to minimize the power coupling loss and back-reflection levels. The theoretical results are compared to the measured data, demonstrating a coupling loss level of [Formula: see text] for TE and TM polarisation. Based on the SiN-SOI interconnection simulation strategy, the simulation results of a quantum-confined Stark effect (QCSE) stack waveguide coupled to a SiN waveguide are then presented.

Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile [Formula: see text] phase change material.

A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize [Formula: see text] optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the [Formula: see text] to be 3.4 x [Formula: see text] and 0.1 x 10[Formula: see text], respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure ([Formula: see text] to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x [Formula: see text] to [Formula: see text] x 10[Formula: see text]. This work experimentally verifies optical phase modifications and permanent trimming of [Formula: see text], enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.

Highly efficient dual-level grating couplers for silicon nitride photonics.

We propose and numerically demonstrate a versatile strategy that allows designing highly efficient dual-level grating couplers in different silicon nitride-based photonic platforms. The proposed technique, which can generally be applied to an arbitrary silicon nitride film thickness, is based on the simultaneous optimization of two grating coupler levels to obtain high directionality and grating-fibre mode matching at the same time. This is achieved thanks to the use of two different linear apodizations, with opposite signs, applied to the two grating levels, whose design parameters are determined by using a particle swarm optimization method. Numerical simulations were carried out considering different silicon nitride platforms with 150, 300, 400 and 500 nm thicknesses and initially employing silicon as the material for the top level grating coupler. The use of Si-rich silicon nitride with a refractive index in the range 2.7-3.3 for the top layer material enabled to obtain similar performance (coupling efficiency exceeding - 0.45 dB for the 400 nm thick silicon nitride platform) with relaxed fabrication tolerances. To the best of our knowledge, these numerical results represent the best performance ever reported in the literature for silicon nitride grating couplers without the use of any back-reflector.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits.

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

Chiral germanium micro-gears for tuning orbital angular momentum.

Group IV light sources with vertical emission and non-zero orbital-angular momentum (OAM) promise to unlock many novel applications. In this report, we demonstrate cylindrically symmetrical germanium micro-gear cavities, fabricated by etching a grating around the circumference of standard micro-disks, with periods ranging from 14 to 22. Photoluminescence (PL) measurements were done to identify the confined whispering-gallery modes (WGM). Finite-difference time-domain (FDTD) simulations were conducted to map the resonant modes to their modal profiles and characteristics. Vertical emission of WGMs with non-zero OAM was demonstrated, with a clear dependence of the OAM order ([Formula: see text]) on the WGM azimuthal order and the number of micro-gear grating periods. As the chirality, or the direction of rotation, is not controlled in a symmetrical cavity, we propose introducing staircase or triangular-shaped gear periods resulting in an asymmetry. By choosing the diameter, number of periods, and the asymmetrical direction of the gear-teeth, it is possible to generate OAM signals with certain wavelength, OAM order and chirality.

Mid-infrared silicon-on-insulator waveguides with single-mode propagation over an octave of frequency.

Increasing the working optical bandwidth of a photonic circuit is important for many applications, in particular chemical sensing at mid-infrared wavelengths. This useful bandwidth is not only limited by the transparency range of waveguide materials, but also the range over which a waveguide is single or multimoded for predictable circuit behaviour. In this work, we show the first experimental demonstration of "endlessly single-mode" waveguiding in silicon photonics. Silicon-on-insulator waveguides were designed, fabricated and characterised at 1.95 µm and 3.80 µm. The waveguides were shown to support low-loss propagation (1.46 ± 0.13 dB/cm loss at 1.95 µm and 1.55 ± 0.35 dB/cm at 3.80 µm) and single-mode propagation was confirmed at 1.95 µm, meaning that only the fundamental mode was present over the wavelength range 1.95 - 3.80 µm. We also present the prospects for the use of these waveguides in sensing applications.

High-speed silicon Michelson interferometer modulator and streamlined IMDD PAM-4 transmission of Mach-Zehnder modulators for the 2 µm wavelength band.

We demonstrate high-speed silicon modulators optimized for operating at the wavelength of 2 µm. The Mach-Zehnder interferometer (MZI) carrier-depletion modulator with 2 mm phase shifter has a single-arm modulation efficiency (Vπ ·Lπ) of 2.89 V·cm at 4 V reverse bias. Using a push-pull configuration it operates at a data rate of 25 Gbit/s OOK with an extinction ratio of 6.25 dB. We also proposed a mathematically-analysed streamlined IMDD PAM-4 scheme and successfully demonstrated a 25 Gbit/s datarate PAM-4 with the same 2 mm modulator. A Michelson interferometer carrier-depletion modulator with 0.5 mm phase shift length has also been shown with modulation efficiency (Vπ ·Lπ) of 1.36 V·cm at 4 V reverse bias and data rate of 20 Gbit/s OOK. The Michelson interferometer modulator performs similarly to a Mach-Zehnder modulator with twice the phase shifter length.

On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials.

We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically Ge2Sb2Se4Te1 and Sb2S3) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach-Zehnder interferometers or frequency selectors for future laser on chip applications. In the case of Ge2Sb2Se4Te1, crystallisation produces a Bragg resonance shift up to ∼ 15 nm, accompanied with a large amplitude modulation (insertion loss of 22 dB). Using Sb2S3, low losses are presented in both states of the phase change material, obtaining a ∼ 7 nm red-shift in the Bragg wavelength. The gratings are evaluated for two period numbers, 100 and 200 periods. The number of periods determines the bandwidth and extinction ratio of the filters. Increasing the number of periods increases the extinction ratio and reflected power, also narrowing the bandwidth. This results in a trade-off between device size and performance. Finally, we combine both phase-change materials in a single Bragg grating to provide both frequency and amplitude modulation. A defect is introduced in the Sb2S3 Bragg grating, producing a high quality factor resonance (Q ∼ 104) which can be shifted by 7 nm via crystallisation. A GSST cell is then placed in the defect which can modulate the transmission amplitude from low loss to below -16 dB.

Comparison of uniaxial and polyaxial suspended germanium bridges in terms of mechanical stress and thermal management towards a CMOS compatible light source.

Germanium (Ge) is a promising candidate for a CMOS compatible laser diode. This is due to its compatibility with Silicon (Si) and its ability to be converted into a direct band gap material by applying tensile strain. In particular uniaxial suspended Ge bridges have been extensively explored due to their ability to introduce high tensile strain. There have been two recent demonstrations of low-temperature optically-pumped lasing in these bridges but no room temperature operation accredit to insufficient strain and poor thermal management. In this paper we compare uniaxial bridges with polyaxial bridges in terms of mechanical stress and thermal management using finite element modelling (FEM). The stress simulations reveal that polyaxial bridges suffer from extremely large corner stresses which prevent larger strain from being introduced compared with uniaxial bridges. Thermal simulations however reveal that they are much less thermally sensitive than uniaxial bridges which may indicate lower optical losses. Bridges were fabricated and Raman spectroscopy was used to validate the results of the simulations. We postulate that polyaxial bridges could offer many advantages over their uniaxial counterparts as potential laser devices.

Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applications.

We demonstrate the potential of a graphene capacitor structure on silicon-rich nitride micro-ring resonators for multitasking operations within high performance computing. Capacitor structures formed by two graphene sheets separated by a 10 nm insulating silicon nitride layer are considered. Hybrid integrated photonic structures are then designed to exploit the electro-absorptive operation of the graphene capacitor to tuneably control the transmission and attenuation of different wavelengths of light. By tuning the capacitor length, a shift in the resonant wavelength is produced giving rise to a broadband multilevel photonic volatile memory. The advantages of using silicon-rich nitride as the waveguiding material in place of the more conventional silicon nitride (Si3N4) are shown, with a doubling of the device's operational bandwidth from 31.2 to 62.41 GHz achieved while also allowing a smaller device footprint. A systematic evaluation of the device's performance and energy consumption is presented. A difference in the extinction ratio between the ON and OFF states of 16.5 dB and energy consumptions of <0.3 pJ/bit are obtained. Finally, it has been demonstrated that increasing the permittivity of the insulator layer in the capacitor structure, the energy consumption per bit can be reduced even further. Overall, the resonance tuning enabled by the novel graphene capacitor makes it a key component for future multilevel photonic memories and optical routing in high performance computing.

Si-rich Si nitride waveguides for optical transmissions and toward wavelength conversion around 2 µm.

We show that subwavelength Si-rich nitride waveguides efficiently sustain high-speed transmissions at 2 µm. We report the transmission of a 10 Gbit/s signal over 3.5 cm with negligible power penalty. Parametric conversion in the pulsed pump regime is also demonstrated using the same waveguide structure with an efficiency as high as -18 dB.

N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band.

We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600 nm thick N-rich silicon nitride platform (n=1.92) optimized to match the International Telecommunication Union coarse wavelength division (de)multiplexing standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with Δλ=20 nm, BW3 dB∼11 nm, IL<1.5 dB, and XT∼20 dB. Additionally, it showed a high tolerance to dimensional errors <120 pm/nm and low sensitivity to temperature variations <20 pm/°C, respectively. This device had a footprint of 0.02 mm×1.7 mm with the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature <400°C.

Germanium vertically light-emitting micro-gears generating orbital angular momentum.

Germanium (Ge) is capturing researchers' interest as a possible optical gain medium implementable on complementary metal-oxide-semiconductor (CMOS) chips. Band-gap engineering techniques, relying mainly on tensile strain, are required to overcome the indirect band-gap nature of bulk Ge and promote electron injection into the direct-gap valley. We used Ge on silicon on insulator (Ge-on-SOI) wafers with a high-crystalline-quality Ge layer to fabricate Ge micro-gears on silicon (Si) pillars. Micro-gears are created by etching a periodic grating-like pattern on the circumference of a conventional micro-disk, resulting in a gear shape. Thermal built-in stresses within the SiO2 layers that encapsulate the micro-gears were used to impose tensile strain on Ge. Biaxial tensile strain values ranging from 0.3-0.5% are estimated based on Raman spectroscopy measurements and finite-element method (FEM) simulations. Multiple sharp-peak resonances within the Ge direct-gap were detected at room temperature by photo-luminescence (PL) measurements. By investigating the micro-gears spectrum using finite-difference time-domain (FDTD) simulations, we identified vertically emitted optical modes with non-zero orbital angular momentum (OAM). To our best knowledge, this is the first demonstration of OAM generation within a Ge light source.

Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators.

We present a Raman mapping study of monolayer graphene G and 2D bands, after integration on silicon strip-waveguide-based micro-ring resonators (MRRs) to characterize the effects of the graphene transfer processes on its structural and optoelectronic properties. Analysis of the Raman G and 2D peak positions and relative intensities reveal that the graphene is electrically intrinsic where it is suspended over the MRR but is moderately hole-doped where it sits on top of the waveguide structure. This is suggestive of Fermi level 'pinning' at the graphene-silicon heterogeneous interface, and we estimate that the Fermi level shifts down by approximately 0.2 eV from its intrinsic value, with a corresponding peak hole concentration of ~ 3 × 1012 cm-2. We attribute variations in observed G peak asymmetry to a combination of a 'stiffening' of the E 2g optical phonon where the graphene is supported by the underlying MRR waveguide structure, as a result of this increased hole concentration, and a lowering of the degeneracy of the same mode as a result of localized out-of-plane 'wrinkling' (curvature effect), where the graphene is suspended. Examination of graphene integrated with two different MRR devices, one with radii of curvature r = 10 µm and the other with r = 20 µm, indicates that the device geometry has no measureable effect on the level of doping.

Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared.

WDM components fabricated on the silicon-on-insulator platform have transmission characteristics that are sensitive to dimensional errors and temperature variations due to the high refractive index and thermo-optic coefficient of Si, respectively. We propose the use of NH3-free SiNx layers to fabricate athermal (de)multiplexers based on angled multimode interferometers (AMMI) in order to achieve good spectral responses with high tolerance to dimensional errors. With this approach we have shown that stoichiometric and N-rich SiNx layers can be used to fabricate AMMIs with cross-talk <30dB, insertion loss <2.5dB, sensitivity to dimensional errors <120pm/nm, and wavelength shift <10pm/°C.

Enhanced light emission from improved homogeneity in biaxially suspended Germanium membranes from curvature optimization.

A silicon compatible light source is crucial to develop a fully monolithic silicon photonics platform. Strain engineering in suspended Germanium membranes has offered a potential route for such a light source. However, biaxial structures have suffered from poor optical properties due to unfavorable strain distributions. Using a novel geometric approach and finite element modelling (FEM) structures with improved strain homogeneity were designed and fabricated. Micro-Raman (µ-Raman) spectroscopy was used to determine central strain values. Micro-photoluminescence (µ-PL) was used to study the effects of the strain profiles on light emission; we report a PL enhancement of up to 3x by optimizing curvature at a strain value of 0.5% biaxial strain. This geometric approach offers opportunity for enhancing the light emission in Germanium towards developing a practical on chip light source.

Experimental demonstration of an apodized-imaging chip-fiber grating coupler for Si3N4 waveguides.

A silicon nitride waveguide is a promising platform for integrated photonics, particularly due to its low propagation loss compared to other complementary metal-oxide-semiconductor compatible waveguides, including silicon-on-insulator. Input/output coupling in such thin optical waveguides is a key issue for practical implementations. Fiber-to-chip grating couplers in silicon nitride usually exhibit low coupling efficiency because the moderate index contrast leads to weak radiation strengths and poor directionality. Here, we present the first, to the best of our knowledge, experimental demonstration of a recently proposed apodized-imaging fiber-to-chip grating coupler in silicon nitride that images an in-plane waveguide mode to an optical fiber placed at a specific distance above the chip. By employing amplitude and phase apodization, the diffracted optical field of the grating is matched to the fiber mode. High grating directionality is achieved by using staircase grating teeth, which produce a blazing effect. Experimental results demonstrate an apodized-imaging grating coupler with a record coupling efficiency of -1.5 dB and a 3 dB bandwidth of 60 nm in the C-band.

Photonic crystal waveguides on silicon rich nitride platform.

We demonstrate design, fabrication, and characterization of two-dimensional photonic crystal (PhC) waveguides on a suspended silicon rich nitride (SRN) platform for applications at telecom wavelengths. Simulation results suggest that a 210 nm photonic band gap can be achieved in such PhC structures. We also developed a fabrication process to realize suspended PhC waveguides with a transmission bandwidth of 20 nm for a W1 PhC waveguide and over 70 nm for a W0.7 PhC waveguide. Using the Fabry-Pérot oscillations of the transmission spectrum we estimated a group index of over 110 for W1 PhC waveguides. For a W1 waveguide we estimated a propagation loss of 53 dB/cm for a group index of 37 and for a W0.7 waveguide the lowest propagation was 4.6 dB/cm.

Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step.

Silicon-germanium (Si(1-x)Ge(x)) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the ability to form localised areas of single crystal, uniform composition SiGe-on-insulator. Here we present a method of simultaneously growing several areas of SiGe-on-insulator on a single wafer, with the ability to tune the composition of each localised SiGe area, whilst retaining a uniform composition in that area. We use a rapid melt growth technique that comprises of only a single Ge growth step and a single anneal step. This innovative method is key in working towards a fully integrated photonic-electronic platform, enabling the simultaneous growth of multiple compositions of device grade SiGe for electro-absorption optical modulators operating at a range of wavelengths, photodetectors, and bipolar transistors, on the same wafer. This is achieved by modifying the structural design of the SiGe strips, without the need to modify the growth conditions, and by using low cost, low thermal-budget methods.

Next generation device grade silicon-germanium on insulator.

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.