On the origin of the lattice constant anomaly in nanocrystalline ceria.

The lattice parameter of nanocrystalline ceria films prepared by sputtering was monitored as a function of annealing temperature. Within the temperature range of 150-420 degrees C, an equilibrium with atmospheric oxygen is established within a few hours, whereas grain growth does not occur. On the basis of the experimental results and analysis of literature data, we present a model that posits the formation of a non-uniform grain structure with stoichiometric interiors and oxygen deficient boundaries. This model, based on defect thermodynamics, correctly describes the dependence of the lattice parameter of nanocrystalline ceria on annealing temperature and grain size and can be extended to other materials as well.

Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals.

Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.