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1.
ACS Appl Mater Interfaces ; 7(4): 2467-79, 2015 Feb 04.
Artigo em Inglês | MEDLINE | ID: mdl-25545798

RESUMO

Three-dimensional gold (Au) nanostructures offer promise in nanoplasmonics, biomedical applications, electrochemical sensing and as contacts for carbon-based electronics. Direct-write techniques such as focused-electron-beam-induced deposition (FEBID) can provide such precisely patterned nanostructures. Unfortunately, FEBID Au traditionally suffers from a high nonmetallic content and cannot meet the purity requirements for these applications. Here we report exceptionally pure pristine FEBID Au nanostructures comprising submicrometer-large monocrystalline Au sections. On the basis of high-resolution transmission electron microscopy results and Monte Carlo simulations of electron trajectories in the deposited nanostructures, we propose a curing mechanism that elucidates the observed phenomena. The in situ focused-electron-beam-induced curing mechanism was supported by postdeposition ex situ curing and, in combination with oxygen plasma cleaning, is utilized as a straightforward purification method for planar FEBID structures. This work paves the way for the application of FEBID Au nanostructures in a new generation of biosensors and plasmonic nanodevices.


Assuntos
Técnicas Biossensoriais/instrumentação , Ouro/química , Nanoestruturas/química , Eletroquímica , Elétrons , Propriedades de Superfície
2.
ACS Appl Mater Interfaces ; 6(22): 20254-60, 2014 Nov 26.
Artigo em Inglês | MEDLINE | ID: mdl-25296008

RESUMO

Nanomagnet logic (NML) is a relatively new computation technology that uses arrays of shape-controlled nanomagnets to enable digital processing. Currently, conventional resist-based lithographic processes limit the design of NML circuitry to planar nanostructures with homogeneous thicknesses. Here, we demonstrate the focused electron beam induced deposition of Fe-based nanomaterial for magnetic in-plane nanowires and out-of-plane nanopillars. Three-dimensional (3D) NML was achieved based on the magnetic coupling between nanowires and nanopillars in a 3D array. Additionally, the same Fe-based nanomaterial was used to produce tilt-corrected high-aspect-ratio probes for the accurate magnetic force microscopy (MFM) analysis of the fabricated 3D NML gate arrays. The interpretation of the MFM measurements was supported by magnetic simulations using the Object Oriented MicroMagnetic Framework. Introducing vertical out-of-plane nanopillars not only increases the packing density of 3D NML but also introduces an extra magnetic degree of freedom, offering a new approach to input/output and processing functionalities in nanomagnetic computing.

3.
Nanotechnology ; 25(31): 315302, 2014 Aug 08.
Artigo em Inglês | MEDLINE | ID: mdl-25036211

RESUMO

Ga implantation into Si and reactive ion etching has been previously identified as candidate techniques for the generation of 3D nanopatterns. However, the structures manufactured using these techniques exhibited impedingly high surface roughness. In this work, we investigate the source of roughness and introduce a new patterning process to solve this issue. The novel patterning process introduces an additional layer absorbing the implanted Ga, thus preventing the clustering of the implanted Ga observed with uncoated Si substrates. This process enables 3D nanopatterning with sub-100 nm lateral resolution in conjunction with smooth height transitions and surface roughness down to 4 nm root mean square. Such patterns are ideally suited for optical applications and enable the manufacturing of nanoimprint lithography templates for low-profile Fresnel lenses.

4.
Langmuir ; 30(25): 7395-404, 2014 Jul 01.
Artigo em Inglês | MEDLINE | ID: mdl-24896967

RESUMO

Two heteroleptic titanium precursors were investigated for the atomic layer deposition (ALD) of titanium dioxide using ozone as the oxygen source. The precursors, titanium (N,N'-diisopropylacetamidinate)tris(isopropoxide) (Ti(O(i)Pr)3(N(i)Pr-Me-amd)) and titanium bis(dimethylamide)bis(isopropoxide) (Ti(NMe2)2(O(i)Pr)2), exhibit self-limiting growth behavior up to a maximum temperature of 325 °C. Ti(NMe2)2(O(i)Pr)2 displays an excellent growth rate of 0.9 Å/cycle at 325 °C while the growth rate of Ti(O(i)Pr)3(N(i)Pr-Me-amd) is 0.3 Å/cycle at the same temperature. In the temperature range of 275-325 °C, both precursors deposit titanium dioxide in the anatase phase. In the case of Ti(NMe2)2(O(i)Pr)2, high-temperature X-ray diffraction (HTXRD) studies reveal a thickness-dependent phase change from anatase to rutile at 875-975 °C. X-ray photoelectron spectroscopy (XPS) indicates that the films have high purity and are close to the stoichiometric composition. Reaction mechanisms taking place during the ALD process were studied in situ with quadrupole mass spectrometry (QMS) and quartz crystal microbalance (QCM).

5.
ACS Nano ; 7(1): 777-84, 2013 Jan 22.
Artigo em Inglês | MEDLINE | ID: mdl-23227975

RESUMO

Nanomagnet Logic (NML) is a promising new technology for future logic which exploits interactions among magnetic nanoelements in order to encode and compute binary information. This approach overcomes the well-known limits of CMOS-based microelectronics by drastically reducing the power consumption of computational systems and by offering nonvolatility. An actual key challenge is the nanofabrication of such systems that, up to date, are prepared by complex multistep processes in planar technology. Here, we report the single-step synthesis of NML key elements by focused electron beam induced deposition (FEBID) using iron pentacarbonyl as a gas precursor. The resulting nanomagnets feature an inner iron part and a 3 nm iron oxide cover (core-shell structure). Full functionality of conventional NML gates from FEBID-nanowires was achieved. An advanced structure maintaining the gate functionality based on bended nanowires was realized. The unique design obtained by direct-writing reduces the error probability and may merge several NWs in future NML elements.


Assuntos
Imãs , Nanoestruturas/química , Nanoestruturas/efeitos da radiação , Processamento de Sinais Assistido por Computador/instrumentação , Elétrons , Desenho de Equipamento , Análise de Falha de Equipamento
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