Integrated Multifunctional Electronic Skins with Low-Coupling for Complicated and Accurate Human-Robot Collaboration.

Multifunctional capability and low coupling electronic skin (e-skin) is of great significance in advanced robot systems interacting with the human body or the external environment directly. Herein, a multifunctional e-skin system via vertical integrated different sensing materials and structures is presented. The multifunctional e-skin has capacity sensing the proximity, pressure, temperature, and relative humidity simultaneously, with scope of 100-0 mm, 0-30 N, 20-120 °C and 20-70%, respectively. The sensitivity of the four kinds of sensors can be achieved to 0.72 mm-1 , 16.34 N-1 , 0.0032 °C-1 , and 15.2 pF/%RH, respectively. The cross-coupling errors are less than 1.96%, 1.08%, 2.65%, and 1.64%, respectively, after temperature compensation. To be state-of-the-art, a commercial robot is accurately controlled via the multifunctional e-skin system in the complicated environment. The following and safety controlling exhibit both accuracy and high dynamic features. To improve the sensing performance to the insulating objects, machine learning is employed to classify the conductivity during the object approaching, leading to set the threshold in dynamic. The accuracy for isolating the insulator increases from 18% to 88%. Looking forward, the multifunctional e-skin system has broader applications in human-machine collaboration and industrial safety production technology.

Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts.

Self-powered photodetectors with great potential for implanted medical diagnosis and smart communications have been severely hindered by the difficulty of simultaneously achieving high sensitivity and fast response speed. Here, we report an ultrafast and highly sensitive self-powered photodetector based on two-dimensional (2D) InSe, which is achieved by applying a device architecture design and generating ideal Schottky or ohmic contacts on 2D layered semiconductors, which are difficult to realize in the conventional semiconductors owing to their surface Fermi-level pinning. The as-fabricated InSe photodiode features a maximal lateral self-limited depletion region and a vertical fully depleted channel. It exhibits a high detectivity of 1.26 × 1013 Jones and an ultrafast response speed of ∼200 ns, which breaks the response speed limit of reported self-powered photodetectors based on 2D semiconductors. The high sensitivity is achieved by an ultralow dark current noise generated from the robust van der Waals (vdW) Schottky junction and a high photoresponsivity due to the formation of a maximal lateral self-limited depletion region. The ultrafast response time is dominated by the fast carrier drift driven by a strong built-in electric field in the vertical fully depleted channel. This device architecture can help us to design high-performance photodetectors utilizing vdW layered semiconductors.

Asymmetrically synchronous reduction and assembly of graphene oxide film on metal foil for moisture responsive actuator.

Graphene has drawn tremendous attention for the fabrication of actuators because of its unique chemical and structural features. Traditional graphene actuators need integration with polymers or other responsive components for shape-changeable behaviour. Searching for a sole material with asymmetric properties is difficult and challenging for actuators that are responsive to external stimulus. Herein, asymmetrically synchronous reduction and assembly of a graphene oxide (GO) film with oxygen-containing group gradients was prepared on various metal foils. Such film possessed asymmetric surface chemical components on both sides, which showed reversible deformation via alternating moisture. Importantly, we can detect the moisture change via recording the voltage pulse during self-deformation on the basis of spontaneous H3O+ ions diffusion across the GO film without the need of power input. Finally, a smart gripper was developed using a moisture responsive GO film. Present work opens a new avenue for developing smart actuator using a sole material and simultaneously realizing the detection of deformation in self-powered mode.

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates.

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source. A 1 × 1 cm2 SiO2/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9-1.2 kΩ/sq and a hole mobility of up to 115.4 cm2/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.