Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe2 Lateral Heterostructure.

When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe2 by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x2, indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal-Mott insulator junction and the high tunability of a Mott insulator by strain.

Superconductivity on Edge: Evidence of a One-Dimensional Superconducting Channel at the Edges of Single-Layer FeTeSe Antiferromagnetic Nanoribbons.

How superconductivity emerges from antiferromagnetic ordering is an essential question for Fe-based superconductors. Here, we explore the effect of dimensionality on the interplay between antiferromagnetic ordering and superconductivity by investigating nanoribbons of single-layer FeTe1-xSex films grown on SrTiO3(001) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we find a one-dimensional (1D) superconducting channel 2 nm wide with a TC of 42 ± 4 K on the edge of FeTe1-xSex (x < 0.1) ribbons, coexisting with a non-superconducting ribbon interior that remains bicollinear antiferromagnetically ordered. Density functional theory calculations indicate that both Se and the presence of the edge destabilize the bicollinear antiferromagnetic magnetic order, resulting in a paramagnetic region near the edge with strong local checkerboard fluctuations that is conducive to superconductivity. Our results represent the highest TC achieved in 1D superconductors and demonstrate an effective route toward stabilizing superconductivity in Fe-based superconductors at reduced dimensions.

Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition.

Two-dimensional (2D) palladium diselenide (PdSe2 ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures and highly anisotropic in-plane optical and electronic properties. However, the lack of high-quality, 2D PdSe2 crystals grown by bottom-up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few-layer (≥2 layers) PdSe2 crystals on various substrates is reported. The high quality of the PdSe2 crystals is confirmed by low-frequency Raman spectroscopy, scanning transmission electron microscopy, and electrical characterization. In addition, strong in-plane optical anisotropy is demonstrated via polarized Raman spectroscopy and second-harmonic generation maps of the PdSe2 flakes. A theoretical model based on kinetic Wulff construction theory and density functional theory calculations is developed and described the observed evolution of "square-like" shaped PdSe2 crystals into rhombus due to the higher nucleation barriers for stable attachment on the (1,1) and (1,-1) edges, which results in their slower growth rates. Few-layer PdSe2 field-effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up to ≈294 cm2 V-1 s-1 , which is comparable to that of exfoliated PdSe2 , indicating the promise of this anisotropic 2D material for electronics.

Evidence for d-Wave Superconductivity in Single Layer FeSe/SrTiO3 Probed by Quasiparticle Scattering Off Step Edges.

The de Gennes extrapolation length is a direction dependent measure of the spatial evolution of the pairing gap near the boundary of a superconductor and thus provides a viable means to probe its symmetry. It is expected to be infinite and isotropic for plain s-wave pairing, and finite and anisotropic for d-wave. Here, we synthesize single-layer FeSe films on SrTiO3(001) (STO) substrates by molecular beam epitaxy and measure the de Gennes extrapolation length by scanning tunneling microscopy/spectroscopy. We find a 40% reduction of the superconducting gap near specular [110]Fe edges, yielding an extrapolation length of 8.0 nm. However, near specular [010]Fe edges, the extrapolation length is nearly infinite. These findings are consistent with a phase changing pairing with 2-fold symmetry, indicating d-wave superconductivity. This is further supported by the presence of in-gap states near the specular [110]Fe edges, but not the [010]Fe edges. This work provides direct experimental evidence for d-wave superconductivity in single-layer FeSe/STO and demonstrates quasiparticle scattering at boundaries to be a viable phase sensitive probe of pairing symmetry in Fe-based superconductors.