Broadband optical switch based on liquid crystal dynamic scattering.

This work demonstrates a novel broadband optical switch, based on dynamic-scattering effect in liquid crystals (LCs). Dynamic-scattering-mode technology was developed for display applications over four decades ago, but was displaced in favor of the twisted-nematic LCs. However, with the recent development of more stable LCs, dynamic scattering provides advantages over other technologies for optical switching. We demonstrate broadband polarization-insensitive attenuation of light directly passing thought the cell by 4 to 5 orders of magnitude at 633 nm. The attenuation is accomplished by light scattering to higher angles. Switching times of 150 µs to 10% transmission have been demonstrated. No degradation of devices is found after hundreds of switching cycles. The light-rejection mechanism is due to scattering, induced by disruption of LC director orientation with dopant ion motion with an applied electric field. Angular dependence of scattering is characterized as a function of bias voltage.

30 to 50 ns liquid-crystal optical switches.

The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C(5)H(11)-Ph-Ph-CN), 5OCB(C(5)H(11)-O-Ph-Ph-CN) and PCH5 (C(5)H(11)-Cy-Ph-CN) have been characterized as a function of temperature, bias voltage and switching voltage, V. The transition time from 90% to 10% transmission scales as V(-1.9) and is limited to 30 to 50 ns by the liquid-crystal breakdown electric field, ~100 V µm(-1). The time from the initial switching voltage step to 90% transmission, delay time, decreases with increasing bias and switching voltage. For 5CB and 5OCB the delay time approaches a constant value at higher electric fields, >10 V µm(-1). Both the transition and delay times decrease with increasing temperature. The minimum transition time at temperatures a few degrees below the nematic-isotropic temperature are 32, 32, and 44 ns and delay times are 44, 25 and 8 ns for 5CB, 5OCB, and PCH5 respectively.

Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.

SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.

CMOS-compatible dual-output silicon modulator for analog signal processing.

A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.

All silicon infrared photodiodes: photo response and effects of processing temperature.

CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si(+) implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475 degrees C. 0.25-mm-long diodes annealed to 300 degrees C have a response to 1539 nm radiation of 0.1 A W-(-1) at a reverse bias of 5 V and 1.2 A W(-1) at 20 V. 3-mm-long diodes processed to 475 degrees C exhibited two states, L1 and L2, with photo responses of 0.3 +/-0.1 A W(-1) at 5 V and 0.7 +/-0.2 A W(-1) at 20 V for the L1 state and 0.5 +/-0.2 A W(-1) at 5 V and 4 to 20 A W(-1)-1 at 20 V for the L2 state. The diodes can be switched between L1 and L2. The bandwidths vary from 10 to 20 GHz. These diodes will generate electrical power from the incident radiation with efficiencies from 4 to 10 %.

Ultraviolet photoresponse characteristics of diamond diodes.

Thep hotoresponseo f Schottkya nd np-diamondd iodes has been measured from 120 to 600 nm. The ultraviolet response is 100 times the visible response.