RESUMO
Atomic layer deposition (ALD) of alumina using trimethylaluminum (TMA) has technological importance in microelectronics. This process has demonstrated a high potential in applications of protective coatings on Cu surfaces for control of diffusion of Cu in Cu2S films in photovoltaic devices and sintering of Cu-based nanoparticles in liquid phase hydrogenation reactions. With this motivation in mind, the reaction between TMA and oxygen was investigated on Cu(111) and Cu2O/Cu(111) surfaces. TMA did not adsorb on the Cu(111) surface, a result consistent with density functional theory (DFT) calculations predicting that TMA adsorption and decomposition are thermodynamically unfavorable on pure Cu(111). On the other hand, TMA readily adsorbed on the Cu2O/Cu(111) surface at 473 K resulting in the reduction of some surface Cu(1+) to metallic copper (Cu(0)) and the formation of a copper aluminate, most likely CuAlO2. The reaction is limited by the amount of surface oxygen. After the first TMA half-cycle on Cu2O/Cu(111), two-dimensional (2D) islands of the aluminate were observed on the surface by scanning tunneling microscopy (STM). According to DFT calculations, TMA decomposed completely on Cu2O/Cu(111). High-resolution electron energy loss spectroscopy (HREELS) was used to distinguish between tetrahedrally (Altet) and octahedrally (Aloct) coordinated Al(3+) in surface adlayers. TMA dosing produced an aluminum oxide film, which contained more octahedrally coordinated Al(3+) (Altet/Aloct HREELS peak area ratio ≈ 0.3) than did dosing O2 (Altet/Aloct HREELS peak area ratio ≈ 0.5). After the first ALD cycle, TMA reacted with both Cu2O and aluminum oxide surfaces in the absence of hydroxyl groups until film closure by the fourth ALD cycle. Then, TMA continued to react with surface Al-O, forming stoichiometric Al2O3. O2 half-cycles at 623 K were more effective for carbon removal than O2 half-cycles at 473 K or water half-cycles at 623 K. The growth rate was approximately 3-4 Å/cycle for TMA+O2 ALD (O2 half-cycles at 623 K). No preferential growth of Al2O3 on the steps of Cu(111) was observed. According to STM, Al2O3 grows homogeneously on Cu(111) terraces.
RESUMO
Palladium nanoparticles were synthesized by thermal decomposition of palladium(II) hexafluoroacetylacetonate (Pd(hfac)2), an atomic layer deposition (ALD) precursor, on a TiO2(110) surface. According to X-ray photoelectron spectroscopy (XPS), Pd(hfac)2 adsorbs on TiO2(110) dissociatively yielding Pd(hfac)(ads), hfac(ads), and adsorbed fragments of the hfac ligand at 300 K. A (2 × 1) surface overlayer was observed by scanning tunneling microscopy (STM), indicating that hfac adsorbs in a bidentate bridging fashion across two Ti 5-fold atoms and Pd(hfac) adsorbs between two bridging oxygen atoms on the surface. Annealing of the Pd(hfac)(ads) and hfac(ads) species at 525 K decomposed the adsorbed hfac ligands, leaving PdO-like species and/or Pd atoms or clusters. Above 575 K, the XPS Pd 3d peaks shift toward lower binding energies and Pd nanoparticles are observed by STM. These observations point to the sintering of Pd atoms and clusters to Pd nanoparticles. The average height of the Pd nanoparticles was 1.2 ± 0.6 nm at 575 K and increased to 1.7 ± 0.5 nm following annealing at 875 K. The Pd coverage was estimated from XPS and STM data to be 0.05 and 0.03 monolayers (ML), respectively, after the first adsorption/decomposition cycle. The amount of palladium deposited on the TiO2(110) surface increased linearly with the number of adsorption/decomposition cycles with a growth rate of 0.05 ML or 0.6 Å per cycle. We suggest that the removal of the hfac ligand and fragments eliminates the nucleation inhibition of Pd nanoparticles previously observed for the Pd(hfac)2 precursor on TiO2.
