Correction: Observation of ordered arrays of endotaxially grown nanostructures from size-selected Cu-nanoclusters deposited on patterned substrates of Si.

Correction for 'Observation of ordered arrays of endotaxially grown nanostructures from size-selected Cu-nanoclusters deposited on patterned substrates of Si' by Shyamal Mondal et al., Phys. Chem. Chem. Phys., 2021, 23, 6009-6016 DOI: 10.1039/D0CP06089E.

Observation of ordered arrays of endotaxially grown nanostructures from size-selected Cu-nanoclusters deposited on patterned substrates of Si.

We report the first time observation of endotaxial growth during thermal treatment of size-selected nanoclusters on a patterned substrate, when we fabricate highly ordered and partially embedded 3D crystalline Cu nanostructure arrays of controlled size in Si-substrates. For this purpose, we combine low energy cluster deposition on the ripple-patterned substrate with controlled annealing. We have investigated, in detail, the effect of the substrate pattern on the deposited size-selected clusters upon heat treatment. At the annealing temperature of 400 °C, nanosized islands are found to be organized into regular arrays, following the alignment of the substrate pattern exactly. The formed islands are trapped at the specific sites of the substrate where surface curvature is maximum and concave. It is also observed that the size of the produced nanoislands (or particles) in the direction of the ripple wave vector, i.e., across the ripples, are in congruence with the ripple wavelength. All the formed islands are partially buried in the substrate and the growth inside the substrate exhibits endotaxial growth. Such an embedded size-controlled nanoscale system can be very promising as sinter-resistant heterogenous catalyst with strong potential in clean energy technology and industrial chemical synthesis.

Gold-decorated highly ordered self-organized grating-like nanostructures on Ge surface: Kelvin probe force microscopy and conductive atomic force microscopy studies.

Nanoarchitecture by atomic manipulation is considered to be one of the emerging trends in advanced functional materials. It has a gamut of applications to offer in nanoelectronics, chemical sensing, and nanobiological science. In particular, highly ordered one-dimensional semiconductor nanostructures fabricated by self-organization methods are in high demand for their high aspect ratios and large number of applications. An efficient way of fabricating semiconductor nanostructures is by molecular beam epitaxy, where atoms are added to a crystalline surface at an elevated temperature during growth, yielding the desired structures in a self-assembled manner. In this article, we offer a room temperature process, in which atoms are sputtered away by ion impacts. Using gold ion implantation, the present study reports on the formation of highly ordered self-organized long grating-like nanostructures, with grooves between them, on a germanium surface. The ridges of the patterns are shown to have flower-like protruding nanostructures, which are mostly decorated by gold atoms. By employing local probe microscopic techniques like Kelvin probe force microscopy and conductive atomic force microscopy, we observe a spatial variation in the work function and different nanoscale electrical conductivity on the ridges of the patterns and the grooves between them, which can be attributed to gold atom decorated ridges. Thus, the architecture  presented offers the advantage of using the patterned germanium substrates as periodic arrays of conducting ridges and poorly conducting grooves between them.

Ion beam sputtering induced nanostructuring of polycrystalline metal films.

The development of fine scale nanostructures in polycrystalline metal films by off-normal ion beam sputtering (IBS) follows similar mechanisms to those in random targets, i.e. the pattern results from the interplay of curvature-dependent-roughening and various smoothing processes. By grazing angle IBS of the deposited metal films it is possible to fabricate metallic nanoripples, nanowires, and nanorods onto semiconductor or insulator substrates without using a template. It has been found that the rms roughness of the as-deposited film is substantially reduced under ion bombardment before the development of nanoscale patterns. The structural anisotropy of the sputtered morphology can have a great influence on the local physical properties of the underlying material. In this paper, we shall review the experimental results on the formation and characteristics of the IBS ripples on polycrystalline metal films prepared by the physical vapor deposition (PVD) technique.