A crown-ether loop-derivatized oligothiophene doubly attached on gold surface as cation-binding switchable molecular junction.

A crown-ether dithiol quaterthiophene is synthesized and immobilized on gold surface by double covalent fixation. UV-vis spectroscopy and cyclic voltammetry show that the corresponding dithioester precursor can complex Pb(2+) in solution and that this property is maintained for monolayers of the dithiol on gold. Current-voltage measurements by eutectic GaIn drop contact on the monolayer show a significant increase (up to 1.6 × 10(3) times) of the current at low bias after Pb(2+) complexation.

Thiolate chemistry: a powerful and versatile synthetic tool for immobilization/functionalization of oligothiophenes on a gold surface.

The synthesis and characterization of a series of quaterthiophenes (4Ts) with thiolate groups protected with 2-cyanoethyl (CNE), 2-trimethylsilylethyl (TMSE), and acetyl (Ac) groups are described. Sequential cleavage of these different protecting groups allows for the preparation of 4Ts derivatized with ferrocene and/or alkanethiol chains. The electrochemical behavior of these compounds has been analyzed in solution by cyclic voltammetry (CV). A ferrocene-derivatized dithiol 4T 14 and a dithiol 4T 15 with two TMSE-protected thiolate groups have been immobilized on a gold surface as monolayers that have been characterized by CV, ellipsometry, contact-angle measurement, and X-ray photoelectron spectroscopy (XPS). The results show that molecules 14 and 15 are doubly grafted with a horizontal orientation of the conjugated system relative to the surface. Furthermore, application of the deprotection/alkylation sequence of the remaining protected thiolate groups on a monolayer of 15 allows for efficient post-functionalization.

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems.

A new azobenzene-thiophene molecular switch is designed, synthesized, and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7 x 10(3) (with an average value of 1.5 x 10(3)) is reported. The "on" conductance state is clearly identified to the cis isomer of the azobenzene moiety. The high on/off ratio is explained in terms of photoinduced, configuration-related changes in the electrode-molecule interface energetics (changes in the energy position of the molecular orbitals with respect to the Fermi energy of electrodes) in addition to changes in the tunnel barrier length (length of the molecules). First principles density functional calculations demonstrate a better delocalization of the frontier orbitals as well as a stronger electronic coupling between the azobenzene moiety and the electrode for the cis configuration over the trans one. Measured photoionization cross sections for the molecules in the SAM are close to the known values for azobenzene derivatives in solution.

Structural control of the horizontal double fixation of oligothiophenes on gold.

Quaterthiophenes bearing one (1) or two (2) alkanethiol chains attached at the internal beta-position of the outermost thiophene ring through a sulfide linkage have been synthesized. Cyclic voltammetric analysis of their electrochemical behavior in solution suggests that electrooxidation of the doubly substituted oligomer 2 leads to electrodeposition of a poly(disulfide) on the anode surface. Monolayers of 1 or 2 on gold surfaces have been investigated and characterized by cyclic voltammetry, ellipsometry, contact angle measurement, and X-ray photoelectron spectroscopy. The results of these investigations indicate that introduction of two thiol groups in the structure leads to double fixation of the oligothiophene chain with the main axis of the conjugated system oriented parallel to the surface. The effects of single versus double fixation of the quaterthiophene chain on the electrochemical properties and stability of the corresponding monolayers are discussed.