On the performance of optical phased array technology for beam steering: effect of pixel limitations.

Optical phased arrays are of strong interest for beam steering in telecom and LIDAR applications. A phased array ideally requires that the field produced by each element in the array (a pixel) is fully controllable in phase and amplitude (ideally constant). This is needed to realize a phase gradient along a direction in the array, and thus beam steering in that direction. In practice, grating lobes appear if the pixel size is not sub-wavelength, which is an issue for many optical technologies. Furthermore, the phase performance of an optical pixel may not span the required 2π phase range or may not produce a constant amplitude over its phase range. These limitations result in imperfections in the phase gradient, which in turn introduce undesirable secondary lobes. We discuss the effects of non-ideal pixels on beam formation, in a general and technology-agnostic manner. By examining the strength of secondary lobes with respect to the main lobe, we quantify beam steering quality and make recommendations on the pixel performance required for beam steering within prescribed specifications. By applying appropriate compensation strategies, we show that it is possible to realize high-quality beam steering even when the pixel performance is non-ideal, with intensity of the secondary lobes two orders of magnitude smaller than the main lobe.

U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band: erratum.

We correct two minor errors in the manuscript. The effective diameter of the ring modulator should be 62.5 µm rather than 65 µm. The factor, g, in the FOM for comparing between the O- and C-band results should be 0.83 instead of 0.7.

Tri-layer silicon nitride-on-silicon photonic platform for ultra-low-loss crossings and interlayer transitions.

We present a three-layer silicon nitride on silicon platform for constructing very large photonic integrated circuits. Efficient interlayer transitions are enabled by the close spacing between adjacent layers, while ultra-low-loss crossings are enabled by the large spacing between the topmost and bottommost layers. We demonstrate interlayer taper transitions with losses < 0.15 dB for wavelengths spanning from 1480 nm to 1620 nm. Our overpass waveguide crossings exhibit insertion loss < 2.1 mdB and crosstalk below -56 dB in the wavelength range between 1480 nm and 1620 nm with losses as low as 0.28 mdB. Our platform architecture is suited to meet the demands of large-scale photonic circuits which contain hundreds of crossings.

U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band.

We demonstrate U-shaped silicon PN junctions for energy efficient Mach-Zehnder modulators and ring modulators in the O-band. This type of junction has an improved modulation efficiency compared to existing PN junction geometries, has low losses, and supports high-speed operation. The U-shaped junctions were fabricated in an 8" silicon photonics platform, and they were incorporated in travelling-wave Mach-Zehnder modulators and microring modulators. For the high-bandwidth Mach-Zehnder modulator, the DC VπL at -0.5 V bias was 4.6 V·mm. It exhibited a 3dB bandwidth of 13 GHz, and eye patterns at up to 24 Gb/s were observed. A VπL as low as ~2.6 V·mm at a -0.5 V bias was measured in another device. The ring modulator tuning efficiency was 40 pm·V-1 between 0 V and -0.5 V bias. It had a 3-dB bandwidth of 13.5 GHz and open eye patterns at up to 13 Gb/s were measured. This type of PN junctions can be easily fabricated without extra masks and can be incorporated into generic silicon photonics platforms.