In-plane reorientation induced single laser pulse magnetization reversal.

Single Pulse All Optical Switching represents the ability to reverse the magnetization of a nanostructure using a femtosecond single laser pulse without any applied field. Since the first switching experiments carried out on GdFeCo ferrimagnets, this phenomena has been only recently extended to a few other materials, MnRuGa alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse switching can be obtained for a large range of rare earth-transition metal multilayers, making this phenomenon much more general. Surprisingly, the threshold fluence for switching is observed to be independent of the laser pulse duration. Moreover, at high laser intensities, concentric ring domain structures are induced. These striking features contrast to those observed in Gd based materials pointing towards a different reversal mechanism. Concomitant with the demonstration of an in-plane magnetization reorientation, a precessional reversal mechanism explains all the observed features.

Universal Pinning Energy Barrier for Driven Domain Walls in Thin Ferromagnetic Films.

We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.

Pinning-dependent field-driven domain wall dynamics and thermal scaling in an ultrathin Pt/Co/Pt magnetic film.

Magnetic-field-driven domain wall motion in an ultrathin Pt/Co(0.45 nm)/Pt ferromagnetic film with perpendicular anisotropy is studied over a wide temperature range. Three different pinning dependent dynamical regimes are clearly identified: the creep, the thermally assisted flux flow, and the depinning, as well as their corresponding crossovers. The wall elastic energy and microscopic parameters characterizing the pinning are determined. Both the extracted thermal rounding exponent at the depinning transition, ψ=0.15, and the Larkin length crossover exponent, ϕ=0.24, fit well with the numerical predictions.

Stochastic current-induced magnetization switching in a single semiconducting ferromagnetic layer.

We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.