Contact atomic force microscopy using piezoresistive cantilevers in load force modulation mode.

Scanning probe microscopy (SPM) encompasses several techniques for imaging of the physical and chemical material properties at nanoscale. The scanning process is based on the detection of the deflection of the cantilever, which is caused by near field interactions, while the tip runs over the sample's surface. The variety of deflection detection methods including optical, piezoresistive, piezoelectric technologies has been developed and applied depending on the measurement mode and measurement environment. There are many advantages (compactness, vacuum compatibility, etc.) of the piezoresistive detection method, which makes it very attractive for almost all SPM experiments. Due to the technological limitations the stiffness of the piezoresistive beams is usually higher than the stiffness of the cantilever detected using optical methods. This is the basic constraint for the application of the piezoresistive beams in contact mode (CM) atomic force microscopy (AFM) investigations performed at low load forces (usually less than 20 nN). Drift of the deflection signal, which is related to thermal fluctuations of the measurement setup, causes that the microscope controller compensates the fluctuations instead of compensating the strength of tip-surface interactions. Therefore, it is quite difficult to keep near field interaction precisely at the setpoint level during the whole scanning process. This can lead to either damage of the cantilever's tip and material surface or loosing the contact with the investigated sample and making the measurement unreliable. For these reasons, load force modulation (LoFM) scanning mode, in which the interaction at the tip is precisely controlled at every point of the sample surface, is proposed to enable precise AFM surface investigations using the piezoresistive cantilevers. In this article we describe the developed measurement algorithm as well as proposed and introduced hardware and software solutions. The results of the experiments confirm strong reduction of the AFM entire setup drift. The results demonstrating contactless tip lateral movements are presented. It is common knowledge that such a scanning reduces tip wear.

Metrology of electromagnetic static actuation of MEMS microbridge using atomic force microscopy.

The objective of this paper is to describe application of atomic force microscopy (AFM) for characterization and calibration of static deflection of electromagnetically and/or thermally actuated micro-electromechanical (MEMS) bridge. The investigated MEMS structure is formed by a silicon nitride bridge and a thin film metal path enabling electromagnetic and/or thermal deflection actuation. We present how static microbridge deflection can be measured using contact mode AFM technology with resolution of 0.05nm in the range of up to tens of nm. We also analyze, for very small structure deflections and under defined and controlled load force varied in the range up to ca. 32nN, properties of thermal and electromagnetical microbridge deflection actuation schemes.

Expanded beam deflection method for simultaneous measurement of displacement and vibrations of multiple microcantilevers.

Here we present an extension of optical beam deflection (OBD) method for measuring displacement and vibrations of an array of microcantilevers. Instead of focusing on the cantilever, the optical beam is either focused above or below the cantilever array, or focused only in the axis parallel to the cantilevers length, allowing a wide optical line to span multiple cantilevers in the array. Each cantilever reflects a part of the incident beam, which is then directed onto a photodiode array detector in a manner allowing distinguishing between individual beams. Each part of reflected beam behaves like a single beam of roughly the same divergence angle in the bending sensing axis as the incident beam. Since sensitivity of the OBD method depends on the divergence angle of deflected beam, high sensitivity is preserved in proposed expanded beam deflection (EBD) method. At the detector, each spot's position is measured at the same time, without time multiplexing of light sources. This provides real simultaneous readout of entire array, unavailable in most of competitive methods, and thus increases time resolution of the measurement. Expanded beam can also span another line of cantilevers allowing monitoring of specially designed two-dimensional arrays. In this paper, we present first results of application of EBD method to cantilever sensors. We show how thermal noise resolution can be easily achieved and combined with thermal noise based resonance frequency measurement.

Buried amorphous-layer impact on dislocation densities in silicon.

The impact of amorphous layers on dislocation densities in silicon piezo-resistors was investigated by means of transmission electron microscopy and chemical etching. Mechanical bevel polishing at a shallow angle and selective etching were applied to assess the dislocation depth distributions. It was found that, despite the presence of additional defects after recrystallization, the initial presence of a buried amorphous layer reduced, after annealing, the dislocation density in the depletion region of a p-n junction, compared with the case of a shallower, surface amorphous layer.

Piezoresistive sensors for scanning probe microscopy

In this article we summarize the efforts devoted to the realization of our ideas of the development of piezoresistive sensor family used in scanning probe microscopy. All the sensors described here are fabricated based on advanced silicon micromachining and standard CMOS processing. The fabrication scenario presented in this article allows for the production of different sensors with the same tip deflection piezoresistive detection scheme. In this way we designed and fabricated, as a basic sensor, piezoresistive cantilever for atomic force microscopy, which enables surface topography measurements with a resolution of 0.1 nm. Next, by introducing a conductive tip isolated from the beam we obtained a microprobe for scanning capacitance microscopy and scanning tunneling microscopy. With this microprobe we measured capacitance between the microtip and the surface in the range of 10(-22) F. Furthermore, a modification of the piezoresistors placement, based on the finite element method (FEM) simulation permits fabrication of the multipurpose sensor for lateral force microscopy, which enables measurements of friction forces with a resolution of 1 nN. Finally, using the same basic device idea and only slightly modified process sequence we manufactured femtocalorimeter for the detection of heat energy in the range of 50 pJ.