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1.
Nano Lett ; 22(12): 4617-4621, 2022 Jun 22.
Artigo em Inglês | MEDLINE | ID: mdl-35652540

RESUMO

Quantum plasmonics aims to harness the deeply subwavelength confinement provided by plasmonic devices to engineer more efficient interfaces to quantum systems in particular single emitters. Realizing this vision is hampered by the roughness-induced scattering and loss inherent in most nanofabricated devices. In this work, we show evidence of a reactive ion etching process to selectively etch gold along select crystalline facets. Since the etch is facet selective, the sidewalls of fabricated devices are smoother than the lithography induced line-edge roughness with the prospect of achieving atomic smoothness by further optimization of the etch chemistry. This opens up a route toward fabricating integrated plasmonic circuits that can achieve loss metrics close to fundamental bounds.

2.
Sci Rep ; 7: 44666, 2017 03 20.
Artigo em Inglês | MEDLINE | ID: mdl-28317888

RESUMO

Fluorescently labelled nanoparticles are routinely used in Correlative Light Electron Microscopy (CLEM) to combine the capabilities of two separate microscope platforms: fluorescent light microscopy (LM) and electron microscopy (EM). The inherent assumption is that the fluorescent label observed under LM colocalises well with the electron dense nanoparticle observed in EM. Herein we show, by combining single molecule fluorescent imaging with optical detection of the scattering from single gold nanoparticles, that for a commercially produced sample of 10 nm gold nanoparticles tagged to Alexa-633 there is in fact no colocalisation between the fluorescent signatures of Alexa-633 and the scattering associated with the gold nanoparticle. This shows that the attached gold nanoparticle quenches the fluorescent signal by ~95%, or less likely that the complex has dissociated. In either scenario, the observed fluorescent signal in fact arises from a large population of untagged fluorophores; rendering these labels potentially ineffective and misleading to the field.

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