Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices.

A variable magnification electron holography, applicable for two-dimensional (2-D) potential mapping of semiconductor devices, employing a dual-lens imaging system is described. Imaging operation consists of a virtual image formed by the objective lens (OL) and a real image formed in a fixed imaging plane by the objective minilens. Wide variations in field of view (100-900 nm) and fringe spacing (0.7-6 nm) were obtained using a fixed biprism voltage by varying the total magnification of the dual OL system. The dual-lens system allows fringe width and spacing relative to the object to be varied roughly independently from the fringe contrast, resulting in enhanced resolution and sensitivity. The achievable fringe width and spacing cover the targets needed for devices in the semiconductor technology road map from the 350 to 45 nm node. Two-D potential maps for CMOS devices with 220 and 70 nm gate lengths were obtained.

Mapping of electrostatic potential in deep submicron CMOS devices by electron holography.

Quantitative two-dimensional maps of electrostatic potential in device structures are obtained using off-axis electron holography with a spatial resolution of 6 nm and a sensitivity of 0.17 V. Estimates of junction depth and variation in electrostatic potential obtained by electron holography, process simulation, and secondary ion mass spectroscopy show close agreement. Measurement artifacts due to sample charging and surface "dead layers" do not need to be considered provided that proper care is taken with sample preparation. The results demonstrate that electron holography could become an effective method for quantitative 2D analysis of dopant diffusion in deep-submicron devices.