Synthesis and Characterization of Nanocrystalline Boron-Nitride Thin Films by Ion Milling and Thermal Treatment for Tribological Coatings: An Approach to Quantifying the Growth Dynamic Process.

Hexagonal boron-nitride nanoparticle coating was deposited on AISI 1045 steel surface. The deposition process included a transformation of B-containing thin organic film into nanocrystalline BN using two methods: thermal annealing at 450-850 °C and reactive ion etching in Ar/N2 plasma. The film structure, phases, and film morphology of deposited nanoparticles of boron nitride on AISI 1045 steel were characterized by XPS, XRD, and EDS. Post-annealing at 450 °C does not lead to the formation of a BN phase in the layer. A non-stoichiometric BN phase with nitrogen deficiency appears at 650 °C. At 850 °C annealing, the formed BN phase is completely stoichiometric. The effects of deposited and incorporated BN on the friction and hardness properties of AISI 1045 steel were also studied. The post-annealing process improved the hardness from 5.35 to 11.4 GPa, showing a pronounced linear temperature dependence. An original approach was adopted to quantify the energy-dependent growth constants based on the indentation load-discharge curves measured on samples treated under different conditions. Those constants describe the rate of the reactions and the type of interdiffusion process characteristic for each material used. This approach can partially fulfill the role of the Rutherford backscattering spectrometry profile, which is an expensive and time-consuming process, mainly when light elements such as boron and nitrogen are used.

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering.

Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.