RESUMO
The electronic valence state of Mn in Pb(Zr0.2Ti0.8)O{3}/La{0.8}Sr{0.2}MnO{3} multiferroic heterostructures is probed by near edge x-ray absorption spectroscopy as a function of the ferroelectric polarization. We observe a temperature independent shift in the absorption edge of Mn associated with a change in valency induced by charge carrier modulation in the La0.8Sr0.2MnO3, demonstrating the electronic origin of the magnetoelectric effect. Spectroscopic, magnetic, and electric characterization shows that the large magnetoelectric response originates from a modified interfacial spin configuration, opening a new pathway to the electronic control of spin in complex oxide materials.
RESUMO
Chemically amplified resists (CARs) that employ acid catalysts are widely used throughout the semiconductor industry due to the need for high throughput in the lithography process. The quantum yield of the particular photoacid generator (PAG) used to generate a given acid ultimately limits the photospeed of the CAR. Determination of quantum yields of photoacid generation is therefore an important component of resist design. We report the development of an on-wafer spectrofluorometric technique for this purpose. This technique is based on one first reported by Feke et al. (J. Vac. Sci. Technol. 2000, B18, 136- 139), which involves doping the resist formulations containing the candidate PAGs with a fluorescent pH indicator dye, coating one wafer per PAG, patterning the wafers with a dose ramp, and spectroscopically imaging the wafers. The response curve of each PAG is spatially and spectrally encoded in the fluorescence images of each wafer. We investigate the efficacy of coumarin 6, a dye that was introduced as an acid sensor by Pohlers et al. (Chem. Mater. 1997, 9, 3222-3230) for this application. We further apply this technique to the determination of the quantum yield of photoacid generation of four candidate PAGs for prototype 193-nm CARs. This technique is convenient, fast, robust, and nondestructive.
RESUMO
We describe the reflection of a strongly focused beam from an interface between two dielectric media. If the beam is incident from the optically denser medium, the image generated by the reflected light is strongly aberrated. This situation is encountered in high-resolution confocal microscopy and data sampling based on solid immersion lenses and oil immersion objectives. The origin of the observed aberrations lies in the nature of total internal reflection, for which there is a phase shift between incident and reflected waves. This phase shift displaces the apparent reflection point beyond the interface, similarly to the Goos-Hänchen shift.
RESUMO
We present a technique for ellipsometric analysis of materials with high lateral resolution. A Michelson-type phase-shifting interferometer measures the phase distribution in the back focal plane of a high numerical aperture objective. Local measurements of the ellipsometric parameter delta are performed over the entire spectrum of angles of incidence. We show that delta is to leading order linearly proportional to the phase change on reflection of normally incident light. We furthermore invert the Fresnel reflection equations and derive expressions for the real and imaginary parts of the refractive index as functions of the phase change on reflection and the reflectivity at normal incidence, both of which are measurable with the same apparatus. Hence we accomplish local measurements of the refractive indices of our samples. Determination of the phase change on reflection permits correction of interferometric topography measurements of heterogeneous specimens.
RESUMO
A formalism is given in which the optical field generated by a near-field optical aperture is described as an analytic expansion over a complete set of optical modes. This vectoral solution preserves the divergent behavior of the near field and the dipolar nature of the far field. Numerical calculation of the fields requires only evaluation of a well behaved, one-dimensional integral. The formalism is directly applicable to experiments in near-field scanning optical microscopy when relatively flat samples are evaluated.
