Photonic heat transport in three terminal superconducting circuit.

We report an experimental realization of a three-terminal photonic heat transport device based on a superconducting quantum circuit. The central element of the device is a flux qubit made of a superconducting loop containing three Josephson junctions, which can be tuned by magnetic flux. It is connected to three resonators terminated by resistors. By heating one of the resistors and monitoring the temperatures of the other two, we determine photonic heat currents in the system and demonstrate their tunability by magnetic field at the level of 1 aW. We determine system parameters by performing microwave transmission measurements on a separate nominally identical sample and, in this way, demonstrate clear correlation between the level splitting of the qubit and the heat currents flowing through it. Our experiment is an important step towards realization of heat transistors, heat amplifiers, masers pumped by heat and other quantum heat transport devices.

Control of the surface plasmon dispersion and Purcell effect at the metamaterial-dielectric interface.

The use of metamaterial as a way to mitigate the negative effects of absorption in metals on the Purcell effect in metal-dielectric structures is investigated. A layered metal-dielectric structure is considered as an anisotropic medium in the long-wavelength limit. The dispersion of the surface plasmon appearing at the boundary between such a structure and a different dielectric material, as well as the position of the peak in the local density of states are studied for various combinations of materials and filling factors of the periodic structure. The calculated frequency dependence of the Purcell factor demonstrates an increase in peak value compared to the conventional plasmonic structure. The results obtained using effective media approach are compared to the results of numerical modelling.

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy.

We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.