RESUMO
The surge in wearable electronics and Internet of Things technologies necessitates the development of both flexible sensors and a sustainable, efficient, and compact power source. The latter further challenges conventional batteries due to environmental pollution and compatibility issues. Addressing this gap, piezoelectric energy harvesters emerge as one kind of promising alternative to convert mechanical energy from ambient sources to electrical energy to charge those low-energy-consumption electronic devices. Despite slightly lower piezoelectric performance compared with those inorganic materials, piezoelectric polymers, notably poly(vinylidene fluoride-co-trifluoroethylene) P(VDF-TrFE), offer compelling properties for both flexible mechanical energy harvesting and self-powered strain/stress sensing, though their piezoelectric performance is expected to be further enhanced via varieties of modulation strategies of microstructures. Herein, we reported the controlled epitaxy process of micrometer-thick copolymer films with the cooperation of friction-transferred poly(tetrafluoroethylene) templates and precise modulation of the annealing conditions. Epitaxial P(VDF-TrFE) films present averaged d33 piezoelectric coefficient of -58.2 pC/N between 50 Hz and 1 kHz with good electromechanical and thermal stability. Owing to the nature of anisotropic crystallization, the epitaxial films exhibit an anisotropic transverse piezoelectric property. Epitaxial films were further utilized for mechanical energy harvesting and monitoring of human pulsation and respiration. This study provided a feasible route for the development of high-performance flexible piezoelectric devices to meet the requirement of flexible electronics.
RESUMO
Technologies for human-machine interactions are booming now. In order to achieve multifunctional sensing abilities of electronic skins, further developments of various sensors are in urgent demand. Herein, a dual-mode proximity sensor based on an oxide thin-film transistor (TFT) is reported. Although InSnO (ITO) is featured with high mobility, the inherent high carrier concentration limits its use as a channel material for thin-film transistors. Herein, the tungsten element was introduced as a carrier suppressor to develop ITO-based semiconducting materials and devices. TFTs with amorphous tungsten-doped ITO (ITWO) channel layers were fabricated. As for a flat panel display application, the TFT device from 250 °C-annealed ITWO layer with an atomic ratio of In/Sn/W = 86:9:5 presented the optimal device performance with carrier mobility of 11.53 cm2 V-1 s-1, swing subthreshold of 0.66 V dec-1, threshold voltage of -2.18 V, and Ion/Ioff ratio of 3.33 × 107 and much small hysteresis of transfer characteristic. ITWO TFT devices were further developed as dual-mode proximity sensors that could work with both extended-gate and compact configurations, where the drain current was directly related to the surface potential of a charged object and the distance between the sensing end and the object, enabling the proximity sensing of charged stimuli. For extended-gate-configured proximity sensing, a charged object modulated the formation of a conductive channel at the semiconductor/SiO2 interface, while this conductive channel occurred at the semiconductor/air interface for compact-configured sensing. Formation of the conductive channel of the compact transistor was modulated by the electric field component in the direction perpendicular to the interface, and the drain current was sensitive to the orientation of the approaching object, which implied the capacity of angle sensing to the approach of a charged object. This work further emphasizes that the basic device performance should be optimized according to its specific application scenarios rather than only considering the requirements of the panel display.
