Highly Wavelength-Selective Self-Powered Solar-Blind Ultraviolet Photodetector Based on Colloidal Aluminum Nitride Quantum Dots.

Colloidal quantum dots are semiconductor nanocrystals endowed with unique optoelectronic properties. A major challenge to the field is the lack of methods for synthesizing quantum dots exhibit strong photo-response in the deep-ultraviolet (DUV) band. Here, a facile solution-processed method is presented for synthesizing ultrawide bandgap aluminium nitride quantum dots (AlN QDs) showing distinguished UV-B photoluminescence. Combined with the strong optical response in solar blind band, a solution-processed, self-powered AlN-QDs/ß-Ga2O3 solar-blind photodetector is demonstrated. The photodetector is characterized with a high responsivity of 1.6 mA W-1 under 0 V bias and specific detectivity 7.60 × 10-11 Jones under 5 V bias voltage with good solar blind selectivity. Given the solution-processed capability of the devices and extraordinary properties of AlN QDs, this study anticipates the utilization of AlN QDs will open up unique opportunities for cost-effective industrial production of high-performance DUV optoelectronics for large-scale applications.

Photocurrent Ambipolar Behavior in Phase Junction of a Ga2O3 Porous Nanostructure for Solar-Blind Light Control Logic Devices.

Photoelectrochemical (PEC) devices are the most similar artificial devices to the nervous system, which is expected to solve the problem of complex computer/nervous system interface (solid-liquid interface) and multifunctional integration (photoelectric fusion) required in the post-Moore era. Based on the different photocurrent ambipolar behavior and different deep ultraviolet solar-blind spectral photoresponse characteristics of α-Ga2O3 and ß-Ga2O3, we designed and constructed the Ga2O3 porous nanostructure PEC device with an adjustable photocurrent bipolar behavior through constructing an α/ß phase junction core-shell structure by adjusting the thickness and the surface state of the shell layer. The switching point of the α/ß-Ga2O3 ambipolar photocurrent shifts toward negative values with the increase of ß-Ga2O3 shell layer thicknesses, and adjustable Boolean logic gates are prepared using the voltage as the input source with a high accuracy manipulated by solar-blind deep ultraviolet light. The controllable solar-blind logic gates based on the ambipolar photocurrent behavior of α/ß-Ga2O3 presented in this study offer a new path for the photoelectric device multifunctional integration needed in the post-Moore era, which can be used in the creation of Ga2O3 half adders and full adders, as well as in the construction of four-input OR gates.

2 in. Bulk ß-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality.

2 in. bulk ß-Ga2O3 single crystals are successfully grown by the edge-defined film-fed growth method with a homemade furnace system. By considering the significance of wafer quality in future mass manufacture, a nine-point characterization method is developed to evaluate the full-scale quality of the processed 2 in. (100)-orientated ß-Ga2O3 single-crystal wafers. Crystalline and structural characteristics were evaluated using X-ray diffraction and Raman spectroscopy, revealing decent crystalline quality with a mean full width at half-maximum value of 60.8 arcsec and homogeneous bonding structures. The statistical root-mean-square surface roughness, determined from nine scanning areas, was found to be only 0.196 nm, indicating superior surface quality. Linear optical properties and defect levels were further investigated using UV-visible spectrophotometry and photoluminescence spectroscopy. The high wafer-scale quality of the processed ß-Ga2O3 wafers meets the requirements for homoepitaxial growth substrates in electronic and photonic devices with vertical configurations.

Highly Polarization-Deep-Ultraviolet-Sensitive ß-Ga2O3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application.

Ultrawide bandgap semiconductor ß-Ga2O3 (4.9 eV), with its monoclinic crystal structure, exhibits distinct anisotropic characteristics both optically and electrically, making it an ideal material for solar-blind polarization photodetectors. In this work, ß-Ga2O3 epitaxial films were deposited on sapphire substrates with different orientations, and the mechanisms underlying the anisotropy of these epitaxial films were investigated. Compared to c-plane sapphire, the lattice mismatch between m- or r-plane sapphire and ß-Ga2O3 is more pronounced, disrupting the rotational symmetry of the films and rendering them anisotropic. Thanks to the improved anisotropy, the polarization ratio of the photodetector based on ß-Ga2O3 films grown on r-plane substrates is 0.24, nearly ten times higher than that on c-plane substrates. Finally, by utilizing these polarization-sensitive photodetectors, we developed an encrypted solar-blind ultraviolet optical communication system. Our work provides a new approach to facilitate the fabrication and application of high-performance polarization-sensitive solar-blind photodetectors.

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology.

Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, poses a significant challenge due to nitrogen's limited solubility in the material. In this study, a new method utilizing plasma-enhanced chemical vapor deposition with high-energy nitrogen plasma was explored to enhance the nitrogen solubility in the material. By adjusting the N2 and O2 carrier gas ratio, we could tune the thin film's bandgap from 4.64 to 3.25 eV, leading to a reduction in the oxygen vacancy density from 32.89% to 19.87%. GaON-based photodetectors exhibited superior performance compared to that of Ga2O3-based devices, with a lower dark current and a faster photoresponse speed. This investigation presents an innovative approach to achieving high-performance devices based on Ga2O3.

Full-Cut Manufacture of Skin-Interfaced Microfluidic Patch with Copper Electrode for In Situ Admittance Sensing of Sweat Rate.

Sweat-rate measurement has received more and more attention, especially for specific groups, such as athletes, soldiers and manual workers, due to their excessive sweat loss under prolonged intense heat stress, which increases the risk of dehydration and electrolyte imbalance. The highly effective manufacture of a sweat-sensing device is essential to its wide range of applications in perspiration-related physiological information detection. In this work, we propose a simple and cost-effective strategy for the manufacture of a microfluidic sweat-rate-sensing patch via laser cutting and transfer printing technology. A copper foil tape is used as the electrode for in situ admittance based sweat-rate-sensing. The detection circuits and measurement conditions are optimized to prevent the negative effect of an electrochemical reaction between a copper electrode and sweat for precise admittance measurement. In vitro and on-body experiments demonstrate that the copper electrode is applicable for admittance-based sweat sensing and is capable of achieving equivalent sensing accuracy as a gold electrode and that the proposed sensor structure can perform consecutive and accurate sweat-rate-sensing and facilitates a significant increase in manufacturing efficiency.

Broadband Ultraviolet Self-Powered Photodetector Constructed on Exfoliated ß-Ga2O3/CuI Core-Shell Microwire Heterojunction with Superior Reliability.

A heterojunction is an essential strategy for multispectral energy-conservation photodetection for its ability to separate photogenerated electron-hole pairs and tune the absorption edge by selecting semiconductors with appropriate bandgaps. A broadband ultraviolet (200-410 nm) self-powered photodetector is constructed on the exfoliated ß-Ga2O3/CuI core-shell microwire heterostructure. Benefiting from the photovoltaic and photoconductive effects, our device performs an excellent ultraviolet (UV) discriminability with a UVC/visible rejection ratio (R225/R600) of 8.8 × 103 and a UVA/visible rejection ratio (R400/R600) of 2.7 × 102, and a self-powered photodetection with a responsivity of 8.46 mA/W, a detectivity of 7.75 × 1011 Jones, an on/off switching ratio of 4.0 × 103, and a raise/decay speed of 97.8/28.9 ms under UVC light. Even without encapsulation, the photodetector keeps a superior stability over ten months. The intrinsically physical insights of the device behaviors are investigated via energy band diagrams, and the charge carrier transfer characteristics of the ß-Ga2O3/CuI interface are predicted by first principle calculation.

A study on the effects of mixed organic cations on the structure and properties in lead halide perovskites.

Recently, organic-lead halide perovskites have emerged as strong competitors in photovoltaic and general optoelectronic applications owing to their remarkable characteristics, including high balance hole and electron mobility, strong absorption coefficient and long carrier lifetime. However, the commercial applicability of these materials is hampered by their relative lack of stability compared to established inorganic and organic semiconductors. It has been found that it is possible to tune the properties and stability of the organic-lead halide perovskite materials by site-substitution at A sites of the ABX3 perovskite structure. Here, organic cations (NH4+, HC (NH2)2+, and CH3CH2NH3+) were successfully incorporated in the methylammonium-based perovskite crystal to investigate the role of organic cation size on structure, optical features, thermal stability, and electrical transport properties. Powder X-ray diffraction results indicate that the size of organic cations can not only cause lattice strain by lattice contraction or dilation but also may induce phase transitions by octahedral tilting. Meanwhile, band gaps of these crystals show that organic cations could tune the band gap energy of the perovskites by changing the Pb-I bond angle, which agrees with previous reports. The result of thermogravimetric analysis indicates that thermal stability is related to the probability of HI formation, which is directly related to the acidity of the organic species. These results represent an important step to highlight the role of organic cations in hybrid perovskite materials, which will further benefit the fundamental understanding of materials and device optimization.

Phase junction enhanced photocatalytic activity of Ga2O3 nanorod arrays on flexible glass fiber fabric.

Ga2O3 nanostructures hold great potential applications in photocatalytic fields due to their stability, high efficiency and environmental friendliness. The construction of phase junction has been proved to be one of the most effective strategies for enhancing Ga2O3 photocatalytic activity. However, the influence of the formation process at the interface of the phase junction on the photocatalytic activity of Ga2O3 nanostructures is far less well understood. In this work, for the first time, large-area Ga2O3 nanorod arrays (NRAs) with controllable α/ß phase junction were prepared in situ on a flexible glass fiber fabric by a facile and environmentally friendly three-step method. The α/ß-Ga2O3 phase junction NRAs exhibit an ultra-high photocatalytic degradation rate of 97% during Ultraviolet (UV) irradiation for 60 min, which is attributed to a unique phase junction promoting efficient charge separation. However, the photocatalytic activity of α/ß-Ga2O3 phase junction NRAs is not evident in the early phase transition, possibly due to the presence of defects acting as charge recombination centers.

Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind Photodetector Based on n-Ga2O3/p-CuSCN Core-Shell Microwire Heterojunction.

Solar-blind photodetectors have captured intense attention due to their high significance in ultraviolet astronomy and biological detection. However, most of the solar-blind photodetectors have not shown extraordinary advantages in weak light signal detection because the forewarning of low-dose deep-ultraviolet radiation is so important for the human immune system. In this study, a high-performance solar-blind photodetector is constructed based on the n-Ga2O3/p-CuSCN core-shell microwire heterojunction by a simple immersion method. In comparison with the single device of the Ga2O3 and CuSCN, the heterojunction photodetector demonstrates an enhanced photoelectric performance with an ultralow dark current of 1.03 pA, high photo-to-dark current ratio of 4.14 × 104, and high rejection ratio (R254/R365) of 1.15 × 104 under a bias of 5 V. Excitingly, the heterostructure photodetector shows high sensitivity to the weak signal (1.5 µW/cm2) of deep ultraviolet and high-resolution detection to the subtle change of signal intensity (1.0 µW/cm2). Under the illumination with 254 nm light at 5 V, the photodetector shows a large responsivity of 13.3 mA/W, superb detectivity of 9.43 × 1011 Jones, and fast response speed with a rise time of 62 ms and decay time of 35 ms. Additionally, the photodetector can work without an external power supply and has specific solar-blind spectrum selectivity as well as excellent stability even through 1 month of storage. Such prominent photodetection, profited by the novel geometric construction and the built-in electric field originating from the p-n heterojunction, meets greatly well the "5S" requirements of the photodetector for practical application.

Efficient Water Transport and Solar Steam Generation via Radially, Hierarchically Structured Aerogels.

A nature-inspired water-cycling system, akin to trees, to perform effective water and solar energy management for photosynthesis and transpiration is considered to be a promising strategy to solve water scarcity issues globally. However, challenges remain in terms of the relatively low transport rate, short transport distance, and unsatisfactory extraction efficiency. Herein, enlightened by conifer tracheid construction, an efficient water transport and evaporation system composed of a hierarchical structured aerogel is reported. This architecture with radially aligned channels, micron pores, and molecular meshes is realized by applying a radial ice-template method and in situ cryopolymerization technique. This nature-inspired design benefits the aerogel excellent capillary rise performance, realizing a long-distance (>28 cm at 190 min) and quick (>1 cm at 1 s, >9 cm at 300 s) antigravity water transport on a macroscopic scale, regardless of clean water, seawater, sandy groundwater, or dye-including effluent. Furthermore, an efficient water transpiration and collection is performed by the bilayer-structured aerogel with a carbon heat collector on an aerogel top, demonstrating a solar steam generation rate of 2.0 kg m-2 h-1 with the energy conversion efficiency up to 85.7% under one solar illumination. This biomimetic design with the advantage of water transport and evaporation provides a potential approach to realize water purification, regeneration, and desalination.

ß-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection.

Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic ß-Ga2O3 NRAs with an average diameter/length of 500 nm/1.287 µm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on ß-Ga2O3 NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity (R λ) of 10.80 mA W-1 and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm-2, exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.

Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV photodetectors can measure and monitor UV radiation without any power consumption. However, the current low photoelectric performance of these detectors has hindered their practical use. In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction was generated by depositing a Sn-doped n-type Ga2O3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had a high UV/visible rejection ratio of R254 nm/ R400 nm = 5.9 × 103 and an ideal detectivity at 1.69 × 1013 cm·Hz1/2·W-1, which is well beyond the level of previous self-powered UV photodetectors. Moreover, our device also has a low dark current (1.8 × 10-11A), a high Iphoto/ Idark ratio (∼104), and a fast photoresponse time of 18 ms without bias. These outstanding performance results are attributed to the rapid separation of photogenerated electron-hole pairs driven by a high built-in electric field in the interface depletion region of the GaN/Sn:Ga2O3 pn junction. Our results provide an improved and easy route to constructing high-performance self-powered UV photodetectors that can potentially replace traditional high-energy-consuming UV detection systems.

Wrinkle-stabilized metal-graphene hybrid fibers with zero temperature coefficient of resistance.

The interfacial adhesion between graphene and metals is poor, as metals tend to generate superlubricity on smooth graphene surface. This problem renders the free assembly of graphene and metals to be a big challenge, and therefore, some desired conducting properties (e.g., stable metal-like conductivities in air, lightweight yet flexible conductors, and ultralow temperature coefficient of resistance, TCR) likely being realized by integrating the merits of graphene and metals remains at a theoretical level. This work proposes a wrinkle-stabilized approach to address the poor adhesion between graphene surface and metals. Cyclic voltammetry (CV) tests and theoretical analysis by Scharifker-Hills models demonstrate that multiscale wrinkles effectively induce nucleation of metal particles, locking in metal nuclei and guiding the continuous growth of metal islands in an instantaneous model on rough graphene surface. The universality and practicability of the wrinkle-stabilized approach is verified by our investigation through the electrodeposition of nine kinds of metals on graphene fibers (GF). The strong interface bonding permits metal-graphene hybrid fibers to show metal-level conductivities (up to 2.2 × 107 S m-1, a record high value for GF in air), reliable weatherability and favorable flexibility. Due to the negative TCR of graphene and positive TCR of metals, the TCR of Cu- and Au-coated GFs reaches zero at a wide temperature range (15 K-300 K). For this layered model, the quantitative analysis by classical theories demonstrates the suitable thickness ratio of graphene layer and metal layer to achieve zero TCR to be 0.2, agreeing well with our experimental results. This wrinkle-stabilized approach and our theoretical analysis of zero-TCR behavior of the graphene-metal system are conducive to the design of high-performance conducting materials based on graphene and metals.

Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films.

Corundum-structured α-phase Ga1.4Sn0.6O3 thin films have been deposited on m-plane Al2O3(300) substrates using laser molecular beam epitaxy technology. With increasing of the oxygen partial pressure, the crystal lattice of Ga1.4Sn0.6O3 films expands due to tin ions valence changes from Sn4+ to Sn2+. The resistivity of the film deposited under 3 × 10-5 Pa is 3.54 × 104 Ω·cm, which decreases by about 2 orders of magnitude than that fabricated under 3 × 10-1 Pa. The mixture valence of Sn2+ and Sn4+ ions leads to the impurity altitude compensation effect. The deep ultraviolet photodetector based on α-phase Ga1.4Sn0.6O3 thin films was fabricated. With the oxygen partial pressure reducing gradually, the dark current and the photocurrent increase, and the relaxation time constants diminish, respectively.

Zero-Power-Consumption Solar-Blind Photodetector Based on ß-Ga2O3/NSTO Heterojunction.

A solar-blind photodetector based on ß-Ga2O3/NSTO (NSTO = Nb:SrTiO3) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the ß-Ga2O3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τd = 0.07 s) and the ratio Iphoto/Idark ≈ 20 under 254 nm light illumination with a light intensity of 45 µW/cm2. Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of ß-Ga2O3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 µW/cm2 of 254 nm light illumination, the photodetector exhibits a responsivity Rλ of 43.31 A/W and an external quantum efficiency of 2.1 × 104 %. The photo-to-electric conversion mechanism in the ß-Ga2O3/NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on ß-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

Inhibition of unintentional extra carriers by Mn valence change for high insulating devices.

For intrinsic oxide semiconductors, oxygen vacancies served as the electron donors have long been, and inevitably still are, attributed as the primary cause of conductivity, making oxide semiconductors seem hard to act as high insulating materials. Meanwhile, the presence of oxygen vacancies often leads to a persistent photoconductivity phenomenon which is not conducive to the practical use in the fast photoelectric response devices. Herein, we propose a possible way to reduce the influence of oxygen vacancies by introducing a valence change doping in the monoclinic ß-Ga2O3 epitaxial thin film. The unintentional extra electrons induced by oxygen vacancies can be strongly suppressed by the change valence of the doped Mn ions from +3 to +2. The resistance for the Mn-doped Ga2O3 increases two orders of magnitude in compared with the pure Ga2O3. As a result, photodetector based on Mn-doped Ga2O3 thin films takes on a lower dark current, a higher sensitivity, and a faster photoresponse time, exhibiting a promising candidate using in high performance solar-blind photodetector. The study presents that the intentional doping of Mn may provide a convenient and reliable method of obtaining high insulating thin film in oxide semiconductor for the application of specific device.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.