The optimal tuning of electronic structure, magnetic, and optical properties of (Fe, V + VO/VSn) co-doped SnO2 via first-principles calculations.

Dilute magnetic semiconductors (DMSs) with both charge and spin degrees of freedom have emerged as promising candidates in the spintronic industry. However, the Curie temperature below room temperature and uncertainty about the origin of ferromagnetism hinder the application of DMSs. To address these issues, we explored a better SnO2-based co-doped method (Fe, V + VSn) using ab initio calculations. The calculation results show that the Sn13FeVO32 (Fe, V + VSn) has a high Curie temperature (716 K), good ferromagnetic properties, stronger covalency of bonds, and better optical transparency in the visible light range. In addition, the holes or electrons generated by the complexes in the (Fe, V + VO/VSn) co-doped system cause a spin-polarized double exchange effect in the Fe-3d, V-3d, and O-2p orbitals, which leads to magnetism of the co-doped systems. The static dielectric constant ɛ1(0) of the system increases after doping. Among them, Sn14FeVO31 (Fe, V + VO) has the largest ɛ1(0), indicating that Sn14FeVO31 has the strongest polarization ability and better photocatalytic properties. In Sn14FeVO31, the imaginary part of the dielectric function and the absorption spectrum all have new peaks in the low-energy region, which are caused by the jump of electrons from the guide band of the spin-polarized impurity energy level. This paper proposes a new method for preparing dilute magnetic semiconductors in spin electronic devices with high room temperature ferromagnetic properties and excellent optical properties through the (Fe, V + VO/VSn) co-doped SnO2.

Pressure-Induced Phase Transition and Compression Properties of HfO2 Nanocrystals.

Nanoparticles exhibit unique properties due to their surface effects and small size, and their behavior at high pressures has attracted widespread attention in recent years. Herein, a series of in situ high-pressure X-ray diffraction measurements with a synchrotron radiation source and Raman scattering have been performed on HfO2 nanocrystals (NC-HfO2) with different grain sizes using a symmetric diamond anvil cell at ambient temperature. The experimental data reveal that the structural stability, phase transition behavior, and equation of state for HfO2 have an interesting size effect under high pressure. NC-HfO2 quenched to normal pressure is characterized by transmission electron microscopy to determine the changing behavior of grain size during phase transition. We found that the rotation of the nanocrystalline HfO2 grains causes a large strain, resulting in the retention of part of an orthorhombic I (OI) phase in the sample quenched to atmospheric pressure. Furthermore, the physical mechanism of the phase transition of NC-HfO2 under high pressure can be well explained by the first-principles calculations. The calculations demonstrate that NC-HfO2 has a strong surface effect, that is, the surface energy and surface stress can stabilize the structures. These studies may offer new insights into the understanding of the physical behavior of nanocrystal materials under high pressure and provide practical guidance for their realization in industrial applications.