RESUMO
A compact millimeter-wave on-chip sensor for dielectric detection is presented using gallium arsenide technology based on spoof surface plasmon polaritons (SSPPs). The proposed structure is developed from traditional half-mode substrate integrated waveguide (HMSIW) and its dispersion characteristics is analyzed through electromagnetic simulations. Consequently, the operating frequency and bandwidth of the on-chip sensor can be easily adjusted, which provides more flexibility for the practical application of the sensor. The linear sensing for relative dielectric constant of the film materials is acquired, with thickness-insensitive property. Moreover, the low coupling to the nearby components can be achieved due to the strong field confinement characteristics of the SSPPs, which is of great significance in the application scenarios of on-chip integrated circuits for the suppression of electromagnetic interference.