Room Temperature Ion Beam Synthesis of Ultra-Fine Molybdenum Carbide Nanoparticles: Toward a Scalable Fabrication Route for Earth-Abundant Electrodes.

Molybdenum carbides are promising low-cost electrocatalysts for electrolyzers, fuel cells, and batteries. However, synthesis of ultrafine, phase-pure carbide nanoparticles (diameter < 5 nm) with large surface areas remains challenging due to uncontrollable agglomeration that occurs during traditional high temperature syntheses. This work presents a scalable, physical approach to synthesize molybdenum carbide nanoparticles at room temperature by ion implantation. By tuning the implantation conditions, various molybdenum carbide phases, stoichiometries, and nanoparticle sizes can be accessed. For instance, molybdenum ion implantation into glassy carbon at 30 keV energy and to a fluence of 9 × 1016 at cm-2 yields a surface η-Mo3 C2 with a particle diameter of (10 ± 1) nm. Molybdenum implantation into glassy carbon at 60 keV to a fluence of 6 × 1016 at cm-2 yields a buried layer of ultrafine γ'-MoC/η-MoC nanoparticles. Carbon ion implantation at 20 keV into a molybdenum thin film produces a 40 nm thick layer primarily composed of ß-Mo2 C. The formation of nanoparticles in each molybdenum carbide phase is explained based on the Mo-C phase diagram and Monte-Carlo simulations of ion-solid interactions invoking the thermal spike model. The approaches presented are widely applicable for synthesis of other transition metal carbide nanoparticles as well.

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications.

Magnetic sensors are key elements in many industrial, security, military, and biomedical applications. Heusler alloys are promising materials for magnetic sensor applications due to their high spin polarization and tunable magnetic properties. The dynamic field range of magnetic sensors is strongly related to the perpendicular magnetic anisotropy (PMA). By tuning the PMA, it is possible to modify the sensing direction, sensitivity and even the accuracy of the magnetic sensors. Here, we report the tuning of PMA in a Co2MnGa Heusler alloy film via argon (Ar) ion irradiation. MgO/Co2MnGa/Pd films with an initial PMA were irradiated with 30 keV 40Ar+ ions with fluences (ions·cm-2) between 1 × 1013 and 1 × 1015 Ar·cm-2, which corresponds to displacement per atom values between 0.17 and 17, estimated from Monte-Carlo-based simulations. The magneto optical and magnetization results showed that the effective anisotropy energy (Keff) decreased from ~153 kJ·m-3 for the un-irradiated film to ~14 kJ·m-3 for the 1 × 1014 Ar·cm-2 irradiated film. The reduced Keff and PMA are attributed to ion-irradiation-induced interface intermixing that decreased the interfacial anisotropy. These results demonstrate that ion irradiation is a promising technique for shaping the PMA of Co2MnGa Heusler alloy for magnetic sensor applications.

28Si+ ion beams from Penning ion source based implanter systems for near-surface isotopic purification of silicon.

Modern computing technology is based on silicon. To date, a cost-effective and easy to implement method to obtain isotopically pure silicon is highly desirable for attaining efficient heat dissipation in microelectronic devices and for hosting spin qubits in quantum computing. We propose that it is possible to use a 28Si+ ion beam to obtain an isotopically pure near-surface region in wafer silicon. However, this requires a highly stable, high current, and isotopically pure 28Si ion beam. This work presents and discusses the instrumentation details and experimental parameters involved in generating this required ion beam. Silane is used as the precursor gas and is decomposed in a Penning ion source to generate a 28Si+ ion beam. The influence of key ion source parameters such as the gas flow rate, magnetic field strength, and anode voltage is presented. An isotopically pure 28Si+ ion beam with 10 ± 0.5 µA current on the target is obtained at the GNS Science 40 kV ion implanter. The beam was observed to be stable for at least 8 h and contains less than 700 ppm of other Si isotopes. This high current and high purity provides opportunities to explore efficient modification of the isotopic distribution in a native Si substrate at ambient temperature. The results highlight opportunities offered by using Penning ion source based low energy ion implanters for the synthesis of isotopically modified Si surface regions-a technique also applicable to other materials such as diamonds and diamond-like carbon.