Charge-Transfer Complexes in Organic Field-Effect Transistors: Superior Suitability for Surface Doping.

We demonstrate the key role of charge-transfer complexes in surface doping as a successful methodology for improving channel field-effect mobility and reducing the threshold voltage in organic field-effect transistors (OFETs), as well as raising the film conductivity. Demonstrated here for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) doped with 2,2'-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6TCNNQ), channel doping by sequential deposition is consistently rationalized by the development of a cocrystalline structure that forms and evolves from the surface of the organic semiconductor film without trading the thin-film structure integrity. This scenario brings higher benefits for the device operation than doping by codeposition, where a decrease in the field-effect mobility of the device, even for a dopant content of only 1 mol %, makes codeposition less suitable. Insight into the structural and electronic properties of the interface satisfactorily explains the improved performance of OFETs upon the incorporation of the dopant and provides an understanding of the mechanism of doping in this system.

Low-Friction of ta-C Coatings Paired with Brass and Other Materials under Vacuum and Atmospheric Conditions.

Vacuum environments provide challenging conditions for tribological systems. MoS2 is one of the materials commonly known to provide low friction for both ambient and vacuum conditions. However, it also exhibits poor wear resistance and low ability to withstand higher contact pressures. In search of wear-resistant alternatives, superhard hydrogen-free tetrahedral amorphous carbon coatings (ta-C) are explored in this study. Although known to have excellent friction and wear properties in ambient atmospheres, their vacuum performance is limited when self-paired and with steel. In this study, the influence of the paired material on the friction behavior of ta-C is studied using counterbodies made from brass, bronze, copper, silicon carbide, and aluminum oxide, as well as from steel and ta-C coatings as reference materials. Brass was found to be the most promising counterbody material and was further tested in direct comparison to steel, as well as in long-term performance experiments. It was shown that the brass/ta-C friction pair exhibits low friction (µ < 0.1) and high wear in the short term, irrespective of ambient pressure, whereas in the long term, the friction coefficient increases due to a change in the wear mechanism. Al2O3 was identified as another promising sliding partner against ta-C, with a higher friction coefficient than that of brass (µ = 0.3), but considerably lower wear. All other pairings exhibited high friction, high wear, or both.

Investigation of indirect excitons in bulk 2H-MoS2 using transmission electron energy-loss spectroscopy.

We have investigated indirect excitons in bulk 2H-MoS2 using transmission electron energy-loss spectroscopy. The electron energy-loss spectra were measured for various momentum transfer values parallel to the [Formula: see text] and [Formula: see text] directions of the Brillouin zone. The results allowed the identification of the indirect excitons between the valence band K v and conduction band Λc points, the Γv and K c points as well as adjacent K v and [Formula: see text] points. The energy-momentum dispersions for the K v-Λc, Γv-K c and K v1-[Formula: see text] excitons along the [Formula: see text] line are presented. The former two transitions exhibit a quadratic dispersion which allowed calculating their effective exciton masses based on the effective mass approximation. The K v1-[Formula: see text] transition follows a more linear dispersion relationship.

Semiconductor-to-metal transition in the bulk of WSe2 upon potassium intercalation.

We present electron energy-loss spectroscopic measurements of potassium (K) intercalated tungsten diselenide (WSe2). After exposure of pristine WSe2 films to potassium, we observe a charge carrier plasmon excitation at about 0.97 eV, which indicates a semiconductor-to-metal transition. Our data reveal the formation of one particular doped K-WSe2 phase. A Kramers-Kronig analysis allows the determination of the dielectric function and the estimation of the composition of K0.6WSe2. Momentum dependent measurements reveal a substantial plasmon dispersion to higher energies.

Controlling electron beam-induced structure modifications and cation exchange in cadmium sulfide-copper sulfide heterostructured nanorods.

The atomic structure and interfaces of CdS/Cu2S heterostructured nanorods are investigated with the aberration-corrected TEAM 0.5 electron microscope operated at 80 kV and 300 kV applying in-line holography and complementary techniques. Cu2S exhibits a low-chalcocite structure in pristine CdS/Cu2S nanorods. Under electron beam irradiation the Cu2S phase transforms into a high-chalcocite phase while the CdS phase maintains its wurtzite structure. Time-resolved experiments reveal that Cu(+)-Cd(2+) cation exchange at the CdS/Cu2S interfaces is stimulated by the electron beam and proceeds within an undisturbed and coherent sulfur sub-lattice. A variation of the electron beam current provides an efficient way to control and exploit such irreversible solid-state chemical processes that provide unique information about system dynamics at the atomic scale. Specifically, we show that the electron beam-induced copper-cadmium exchange is site specific and anisotropic. A resulting displacement of the CdS/Cu2S interfaces caused by beam-induced cation interdiffusion equals within a factor of 3-10 previously reported Cu diffusion length measurements in heterostructured CdS/Cu2S thin film solar cells with an activation energy of 0.96 eV.